Used TEL / TOKYO ELECTRON A808SE #9350868 for sale

ID: 9350868
Wafer Size: 8"
Vintage: 2013
PI Bake furnaces, 8" 2013 vintage.
TEL / TOKYO ELECTRON A808SE is a diffusion furnace and accessory equipment used for light element diffusion and CZ growth. It is a multi-level structure designed to provide users with optimal temperature control and uniformity. The system features an optimal flat even heating design for precise temperature control and uniformity required for production of devices such as silicon wafers, ICs, LEDs, and photovoltaic devices. It also features a high-precision full-closed loop controlled unit and a built-in nitrogen circulating machine for optimal performance. Additionally, the tool topography includes a loadlock which helps in uniform distribution of the temperature and uniformity for semiconductor devices. TEL A808SE employs a two-stage heating asset for temperature uniformity, and fast temperature up and down cycles. The unit is capable of reaching temperatures up to 1250°C and is equipped with an advanced pyrometer and PLC controller, as well as thermocouple sensors for precise temperature control. It has a high-accuracy of ±1°C due to its fast-reacting elements and quick feedback response. Additionally, the high-performance of the model is supported by a high-reliability redundant control equipment. The workstation also includes a user-friendly touchscreen display panel as well as a vacuum-proof, ceramic interior for ease of operation, maintenance, and cleaning. Safety controls are built into TOKYO ELECTRON A808SE to prevent unintended experiments from occurring. The system includes both manual and automatic temperature control modes, as well as an automatic lid control unit to prevent over-sampling or overheating in case of problems such as excessive exothermal reaction. In addition, the machine offers a variety of high-tech functions for smooth experiment operation and detailed analysis. With its variety of features and high temperatures, A808SE is an ideal tool for light element diffusion and CZ growth. It provides fast-acting response and precise control for high-precision experimentations with temperatures up to 1250°C and ideal for semiconductor production.
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