Used MATTSON Aspen II #9398659 for sale

Name: MATTSON Aspen II
Brand: MATTSON
SKU: 9398659
Availability: InStock

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Etchers / Ashers

Manufacturer

MATTSON

Model

Aspen II

ID: 9398659

Wafer Size: 8"

ICP System, 8" MATTSON Endpoint detection system With fixed filters: 430 and 520 Cable length: 19 ft (3) RF Cables and signal cables (2) Heaters MFC Chambers: Back chamber: 366 MHz CPU: Analog in and PCB out Floppy Disk Drive (FDD): DI/DO Cards Chassis: Power supply Gas channel: Bottom feed channel Cool down station: No water cooling Gas lines Right chamber: 366 MHz CPU: SEC II Card Floppy Disk Drive (FDD): Robot stepper (SMC-PC3) Chassis: Backing plain Gas channel: Junction box Cool down station: Lexan plates Gas lines with filters Front end: 26" Opening with separate operator interface 4-Color light tower Operator / Engineering monitor: TFT Design monitor Gas box with sub frames EMO Buttons Interlock circuit: Push button switches Hanging panels Load lock: Single load lock (2) Cassette stations Capability of queuing lots Pin search assembly: Proximity sensors Load lock seal: Lip seal Platform and cassette: (4) 25-Slot cassettes Rotating cassette nests, 8" Cool down station: Flat cool down station without water lines Load lock fast exchange Transfer robot: Main robot: 3-Axis robot with flex cable Robot arm: (4) Adjustable paddles with standard arm Slit door Wafer sensors: Paddles, front and rear cassettes Shuttle: 26" Process module: Chamber right and back: Tube type: Quartz tube Standard process window ICP Chamber O-ring type: Flurosilicon Temperature controller: WATLOW 988 / EZ Zone Thermal couples: Spring loaded TC Lift pin assembly Grids / Guide rings: Extended guide ring Electrical feed through Manifold and ceramic parts Isolation valve Top plate Load lock Chamber Pressure controller: VAT Valve pressure controller Chamber manometer: 10 Torr Load lock manometer: 100 Torr Shuttle manometer: 1000 Torr RF / MW System: RF System: Top RF 13.56 MHz (3) RFPP10 RF Generators: (2) Power cables missing TRAZER AMU 10D-2 RF Top match, P/N: 914-92003-00: (2) Vacuum capacitors missing Re-silvered RF coils (125) RF Vacuum caps: 100PF AC Box: 2-3 Phase generators with safety cover DC Box Gas system: Gas VCR gasket: Stainless steel and Nickel Gas line / Gas / Range Gas 1 / O2 / 1000 SCCM Gas 2 / N2 / 1000 SCCM Gas 3 / N2/H2 (4%) / 2000 SCCM Gas 4 / CF4 / 100 SCCM Side: Gas 1 / O2 / 5 SLM Gas 2 / N2 / 1 SLM Gas 3 / CF4 / 200 SCCM Gas 4 / O2 / 1 SLM Rear: Gas 1 / O2 / 10 SLM Gas 2 / N2 / 1 SLM Gas 3 / CF4 / 200 SCCM Gas 4 / O2 / 1 SLM.

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MATTSON Aspen II is an advanced etching equipment that provides precision etching with high throughput and low cost of ownership. It is designed to increase productivity while providing a high level of flexibility and control over etching parameters. Aspen II is used in numerous types of applications and research projects requiring etching of various materials. It is suitable for etching many substrates including silicon, quartz, molybdenum, and stainless steel. The system features an adjustable stage to easily etch large or small substrates including corners, edges, and steps. The large etching chamber allows for etching multiple wafers at one time in order to speed up production. MATTSON Aspen II is well equipped with an ultra-precision robotic X, Y, Z drive with a maximum speed of 11 mm/sec. It also features high speed vision-based alignment and auto-focusing. The unit also has a chiller to optimally cool the substrate in order to stabilize the etching process. The etch rate is very stable, providing flexible etching conditions with the ability to repeat high performance results. The machine is equipped with a vacuum pump and is capable of creating a low-vacuum environment with a chamber pressure of 5 mTorr. The tool also has a built-in pre-chamber degassing asset which allows for pristine etching conditions. Aspen II is also capable of anisotropic etching where the etch rate along the vertical axis is higher than etch rate along the horizontal axis. MATTSON Aspen II features a wide range of etching chemistries including oxygen, chlorine, sulfur hexafluoride, and fluorine radicals. In order to ensure reproducible results, the model also features remote control over key parameters such as electrical power, temperature, and ion source. Additionally, the equipment can easily be integrated into existing semiconductor processes. Aspen II is an excellent choice for high-performance, high-throughput etching. Its robust construction and precision capabilities make it a perfect choice for many different etching applications.