Used STS / CPX Multiplex ICP #293603805 for sale

ID: 293603805
Wafer Size: 6"
Deep Reactive Ion Etcher (DRIE), 6" Type: Non-MESC Anisotropic etch Vacuum Plasma Materials: Silicon, SiNx Gases: C4H8, SF6, O2 Photoresist masks Etch rates: 1-2 µm/min Mounted on 6" carrier wafer Load lock Manual.
STS / CPX Multiplex ICP (Inductive Coupled Plasma) is an etcher/ asher equipment intended for semiconductor device fabrication and other applications. This etcher/ asher system uses an Inductively Coupled Plasma, or ICP, source to deliver a precise dose of reactive gas to a wafer for either etching or ashing. The ICP source uses multi-frequency input power to generate an electromagnetic field via (typically) two power buses, a generator coil and the chuck electrode. The ICP source employs multiple processes to deposit and remove material from the wafer. The first process is the induction of high frequency AC power from the generator coil to induce currents in the chuck, this process is critical for etching/ ashing as it creates localized temperature and pressure gradients across the wafer that initiate the desired etch and gas deposition processes. At high power levels, the ICP source also uses a second process to generate a Hall-effect plasma. In this process the ICP source uses a combination of AC and DC power inputs to create a high-density electrical plasma. The plasma is formed by electrons accelerated by a potential difference created by the DC power, with the AC power providing an additional level of control over the etch or ashing process. The ICP reacts with the reactive gas, either etching or ashing as desired. The ETCH/ ASH stage of the process is completely controlled by an independent software, allowing for precise control of ionization, ionization time and total energy, among other parameters. In the etch/ ashing process, the ICP interacts with the chemical species present in the reactive gas to create a plasma field. This plasma field, when introduced to the wafer, helps to etch or ash, depending on the desired process, material from the wafer surface. The reaction is similar to a sputtering process, with the ICP playing the role of the sputter source. In addition to etch/ ashing, STS Multiplex ICP is also suitable for a number of processes, including chemical vapor deposition (CVD), ion implantation, Micromask deposition and Thermal-Assisted Etching. The etcher/ asher unit is able to handle a number of substrates including silicon, germanium, and silicon-on-insulator. CPX Multiplex ICP is used in a wide variety of applications ranging from display production to manufacturing of MEMS devices. The flexibility of the machine, along with its robust design makes it an excellent choice for many etch/ ashing processes.
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