Used AIXTRON 2400G3 HT #9292253 for sale

AIXTRON 2400G3 HT is a horizontally configured deposition reactor designed for crystal growth applications. This reactor utilizes an RF (radio frequency) plasma to create a low-pressure environment for chemical vapor deposition (CVD) processes. This means the source material for the deposition reaction is delivered to the chamber in the form of a gaseous vapor by means of a controlled flow injection process. The RF plasma is generated from electrodes that are located both inside and outside the reactor chamber. This RF plasma is used to ionize the gaseous source material, which creates conditions for optimal growth of the desired material. AIXTRON 2400 G3-HT incorporates advanced process control and temperature control technology, allowing users to precisely control deposition parameters and process conditions. The reactor's temperature control can be set up to reach a maximum of 900°C, depending upon the material being grown. The reactor is equipped with AIXTRON patented fast scanning capability, allowing the user to precisely calibrate process parameters and optimize the growth process. 2400 G3 HT is a single-wafer reactor and has a standard layer-on-layer (LOL) and maximum wafer size of 12 inch. The reactant gases are injected into the deposition zone through two open rings at the top of the reactor chamber and then distributed evenly by a set of baffles. With its large volume and high throughput capabilities, 2400 G3-HT maintains a consistent and uniform film deposition throughout the growth process. In addition to its exceptional technological features, 2400G3 HT has several additional safety features. It comes with a layer-over-temperature control system, designed to prevent contamination of the substrate by preventing any coalescence of the deposited film material. In addition AIXTRON 2400 G3 HT is equipped with an inert gas atmosphere inside the reactor chamber, further preventing the formation of any unwanted deposits. All in all, AIXTRON 2400G3 HT is a highly advanced deposition reactor that is well-suited for growing crystals. It offers optimum temperature and pressure control and comes with several safety features that help users achieve the desired results without compromising the substrate. AIXTRON 2400 G3-HT is the perfect choice for producing high purity crystals with excellent uniformity and structural integrity.