Used AMAT / APPLIED MATERIALS Centura WCVD #9200055 for sale

AMAT / APPLIED MATERIALS Centura WCVD
ID: 9200055
WxZ System.
AMAT / APPLIED MATERIALS Centura WCVD is a type of chemical vapor deposition (CVD) reactor that is used to grow thin films of materials on a wide variety of substrates. The reactor has a rectangular design with a finite-depth chamber made up of an envelope of quartz and an array of gas-inlet/exhausting nozzles for the reactant gases. In the chamber, an electric-induction heat source is used to effect surface-sensitive reactions. The WCVD process consists of multiple simultaneous gas-phase reactions where the substrate is maintained at high pressure and temperature. The substrate is exposed to reactant gas which contains the materials needed for film growth. These reactants decompose in the chamber to form a deposit. Wafer temperature is measured by a quartz crystal microbalance and is adjustable from room temperature up to a maximum of 1000°C. The WCVD process is suitable for many semiconductor materials such as silicon, germanium, and silicon compounds. It is also used for metal, alloy and oxidation films such as titanium nitride, boron carbide, silicon nitride, and titanium silicide. The process is also used to deposit organic and ceramic layers such as polyvinylidene fluoride (PVDF). The accuracy and precision of AMAT Centura WCVD process are constructed to be very precise, owing to the high accuracy of the process. The uniformity and repeatability of film are excellent, with films controllable to within +/- 0.1 nm. For metal and oxide thin film deposition, the temperature stability of the process is very important, and the WCVD system offers excellent thermal control in the range of +/- 0.1°C. APPLIED MATERIALS CENTURA WCVD process is one of the most advanced CVD technologies available today. It offers superior process control and repeatability compared to other CVD methods. Its multi-functional design enables deposition of various films with excellent uniformity and control. It is capable of producing films with precise thickness control and uniformity. This makes the WCVD process an ideal choice for a variety of thin film applications.
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