Used AMAT / APPLIED MATERIALS Endura CL #9293628 for sale

AMAT / APPLIED MATERIALS Endura CL
ID: 9293628
Wafer Size: 12"
Vintage: 2004
PVD System, 12" 2004 vintage.
AMAT / APPLIED MATERIALS Endura CL Reactor is a continuous-flow gas-phase deposition equipment designed for low-temperature atomic layer deposition (ALD) on metal, dielectric, and semiconductor materials. This system enables the deposition of oxide, nitride, sulfide, and other thin-film materials for various development requirements, such as precision films for microelectromechanical systems (MEMS) and advanced optical components. AMAT Endura CL Reactor has a modular design and is built with superior materials for long-term durability. It is equipped with a dual deposition source, allowing simultaneous operation of two separate films, which reduces the time required for a single deposition compared to conventional single-source systems. This unit also employs advanced film deposition technologies such as sequential ALD and co-deposition. The sequential ALD process enables layer-by-layer film growth, which produces uniform, conformal, and highly regulated thickness films. The co-deposition process allows two materials to be co-deposited for controlled and precise film properties. The reactor includes an automated sample loading machine with a high-efficiency gas manifold capable of the delivery of different gases and precursors. It also provides precise temperature and flow rate control, as well as pulsed reactive gas injection and timed batch gas flow, which allow for perfect control of ALD parameters. APPLIED MATERIALS Endura CL includes a workstation with a bright graphical user interface for convenient monitoring and control of deposition processes. It is equipped with a data-logging feature that records every step and is programmed for automated recipe steps. This tool also includes a variety of safety features such as over-temperature alert, flow alarm, and safety valve. Overall, Endura CL Reactor provides precise and repeatable thin-film deposition solutions for various development requirements. Its advanced features and high-efficiency gas delivery make it ideal for low-temperature ALD of metal, dielectric, and semiconductor materials. This reliable and user-friendly asset provides superior film quality, which makes it perfect for precise and uniform thin-film deposition on a wide range of substrates.
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