Used VEECO / EMCORE TurboDisc 300 II GaN #9245320 for sale

ID: 9245320
Vintage: 2007
MOCVD System 2007 vintage.
VEECO / EMCORE TurboDisc 300 II GaN Reactor is a specialized, state-of-the-art production tool designed for the growth of gallium nitride (GaN) and Group-III nitride based epitaxial layers. VEECO TurboDisc 300 II GaN Reactor utilizes an advanced high-efficiency super-cyclonic nozzle in its process chamber to enable reliable and economical growth at the highest possible throughput rate. Its adjustable pressure controller provides precise control of pressure within the chamber, enabling thick film growth at a much faster rate than previous generations of GaN reactors, making it ideal for high-volume production. Furthermore, EMCORE TurboDisc 300 II GaN reactor is designed specifically for reliable operation in harsh industrial conditions, with an easy to maintain, all-metal construction design. TurboDisc 300 II GaN Reactor also features an advanced, high-temperature range, optically-isolated, pyrolytic graphite susceptor that maintains temperature uniformity across the wafer's surface. The combination of its temperature performance and cyclonic bellow diffusion system results in exceptional particle control and thus reduced defect generations. In addition, the TurboDisc 300 II feature a front-opening design that permits easy, rapid transitions between process chambers and cooling plates. This opens up advanced process possibilities, such as increased dopant concentrations, reduced thermal diffusion along the growth surface, improved plasma uniformity and better control of surface chemistry. VEECO / EMCORE TurboDisc 300 II GaN Reactor also benefits from an advanced hyperspectral technology, offering the highest resolution for visualizing various growth layers. This technology provides a real-time view of the GaN layers during the growth process, enabling highly accurate control of layer uniformity and thickness. Finally, thanks to its powerful pre- and post- process characterization capabilities, VEECO TurboDisc 300 II GaN Reactor System also offers unprecedented process diagnostics capabilities, enabling operators to gain further insight into the various chemical and structural parameters throughout the growth process. Overall, EMCORE TurboDisc 300 II GaN Reactor is a powerful and reliable production tool, engineered to optimize GaN layer growth efficiency and uniformity, enabling industrialized production of GaN-based materials.
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