Used VEECO / EMCORE TurboDisc K465i GaN #9375121 for sale

VEECO TurboDisc K465i Gallium Nitride (GaN) reactor is a microwave device designed for epitaxial growth of nitride compound semiconductor materials. The equipment is equipped with two K465i GaN reactors, making it a powerful and reliable two-chamber production tool. The K465i reactor combines state-of-the-art klystron-based microwave technology with advanced computer control and monitoring. Through this combination, it is able to provide highly-accurate microwave power distribution, monitoring and control in order to yield optimum uniformity on the wafer and promote low temps. The K465i reactor also features a controllable substrate temperature range of -10°C to +450°C and a heated quartz tube which eliminates need for sidewall heating coils. The K465i is capable of homogeneous growth over large substrate sizes due to variable focus, uniform cavity radiation pattern, and linear variable field profile. The V-shaped cavity design provides wide angle coverage, enabling improved uniformity throughout the epitaxial layer, while the digital control system achieves better filter control. The Advanced Substrate Heating Unit (ASHS) allows for precise thermal budget control without the need for inert gas emission, as the wafer heated in an oxygen-free environment. The ASHS also offers full digital temperature control, more accurate substrate temperature measurement, as well as automatic tuning to ensure the best possible results. Other features include an advanced locking machine which allows total flexibility in a variety of configurations, and non-contact electrical interlock pins to prevent inadvertent ingress of foreign materials. The K465i GaN reactor is also equipped with microwave power monitoring systems to ensure efficient microwaves transfer and accurate power coupling. Additionally, the receiver has vacuum sensing ports which allow for real-time monitoring and great absolute accuracy of pressure. VEECO / EMCORE TurboDisc K465i GaN reactor is a reliable and powerful tool for the production of high-quality epitaxial wafers. It provides optimized uniformity, precise temperature control, excellent substrate heating and advanced digital control systems. These features make it an ideal choice for any compound semiconductor epitaxial project.