Used VEECO / EMCORE TurboDisc K465i GaN #9375131 for sale

ID: 9375131
Vintage: 2011
MOCVD System 2011 vintage.
VEECO / EMCORE TurboDisc K465i GaN reactor is a high temperature chemical vapor deposition (HTCVD) tool designed for the manufacture of gallium nitride (GaN) based compound semiconductor devices. The K465i combines two high-powered, constant-flow reactive gas modules with a set of advanced controls to provide a sophisticated and robust CVD environment. The K465i is an all-metal, all-gas reaction module with a uniform temperature profile across the surface of the substrate. With its proprietary gas flow delivery system, the K465i enables precise control over the distribution of the reactive gas throughout the chamber, while maintaining uniform temperature. This dynamic control of flow patterns ensures a homogenous reaction environment, which is critical for producing high quality GaN crystals. The K465i is designed to be highly reliable and efficient with fast cooldown and startup times. It utilizes an automated chamber cleaning system to reduce downtime by minimizing the need for manual cleaning. This coupled with a long lived cathode, results in reduced maintenance costs and enhanced process stability. The K465i features a wide range of process controls that make it suitable for researching and producing a variety of next-generation devices. By utilizing high-precision Mass Flow Controller (MFC) technology, users can accurately set the process parameters to create a wide variety of GaN structures. The K465i also supports the use of multi-step processes, which further enhances its accuracy and variability. The K465i is an ideal choice for producing VCSELs, lasers, LEDs and other devices that require the highest level of performance and accuracy. Its advanced features allow for uniform deposition and enable precise control of the surface profile and electric/optical performance of the device. With its powerful and efficient design, the K465i provides unmatched performance and ease of use, making it an excellent choice for high-quality GaN crystal deposition.
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