Used TAISEI GRI-40C-M2 #9395052 for sale

TAISEI GRI-40C-M2
ID: 9395052
Cylindrical grinding machine.
TAISEI GRI-40C-M2 is a full-featured wafer grinding, lapping, and polishing system designed for the efficient processing of all semiconductor wafer materials. It features two grinding stages, an abrasive lapping stage, and a diamond polishing stage. The versatile, compact system measures 1750 mm × 1000 mm × 950 mm, making it a great choice for laboratories with limited floor space. The first grinding stage of GRI-40C-M2 is designed to remove surface topography defects from the wafer. The robust design features air bearing spindles and a rubber-contact belt-driven grinding mechanism, ensuring consistently smooth grinding results. It operates with a wide range of abrasive materials, including CBN (Ceramic Banded Notching) and diamond embedded grinding wheels. This first stage can be used to shape edges, corners, and other wafer features. The second stage consists of an abrasive lapping process, utilizing a controlled oil-filled air bearing-based mechanism. Its high-precision wheel head ensures accurate control and uniform lapping, resulting in smooth, consistent lapping results. This process is excellent for preparing non-diamond surfaces with minimal defects. TAISEI GRI-40C-M2's diamond polishing stage is designed for the ideal finish. With its air bearing mechanical design, it provides low surface roughness and high flatness values. It also utilizes three-axis motion control, a liquid or suspension polishing wheel, and a surface cooling element. All of these features combine to provide exceptionally precise diamond polishing. Overall, GRI-40C-M2 is a great choice for efficient and precise wafer grinding, lapping, and polishing. With its versatile design, two grinding stages, an abrasive lapping stage, and a diamond polishing stage, it can process any type of semiconductor wafer material with minimal defects. Additionally, its compact design fits easily into small benchtop laboratories, making it a great option for confined work areas.
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