Molecular Beam Epitaxy reactor, 1991 vintage.

Molecular Beam Epitaxy System One chamber in series of four Single growth chamber with RHEED and a UTI mass spectrometer Includes: ION cryopump but the helium compressor for this pump is missing Perkin-Elmer Digital Gauge Control III Perkin-Elmer Analog HEED Gun Control Five - Sorensen DCR 80-33B Power Supply Perkin-Elmer Oven Function Control Three - Perkin-Elmer Interlock Extension Five - Micristar Temp Control Four - Perkin-Elmer Power Supply KEPCO Power Supply System has been exposed to Ag, Mg, Cd, Al, ZnCl2, Te, Se, As, Ga, N, In and S System has not be contaminated Non-operational and has no mechanism to feed in samples De-installed ~1990 vintage As-is.

Molecular Beam Epitaxy System / High Vacuum Deposition System, 4". TEMESCAL CV-14 Electron Beam Power Supply with controls Vacuum chamber with cryopump, ports, and manipulators IC 6000 deposition controller Sentinel III controller and Sentinel 200 (4) Lambda DC power supplies Missing a few Conflat Flange ~1997 vintage.

MBE system Under vacuum Demonstrable 1982 vintage.

MBE system, equipped with: Six standard effusion cells for the group III elements Indium (In), Aluminum (Al), and Gallium (Ga), for the dopants Silicon (Si), Gallium-Telluride (GaTe), and Beryllium (Be). For the group V elements a standard cracker cell for Antimony (Sb) to generate molecular beams of Sb2 and a valved cracker cell for Arsenic (As), which enables on-demand generation of either As2 or As4, is used. Both cracker cells are manufactured by Veeco Currently, various types of III-As, Sb heterostructures are being grown, such as: Low temperature growth (Ts around 200°C) of GaAs and GaAsSb for THz applications AlSb/InAs and GaSb/InAs quantum well structures on GaAs and GaSb substrates AlInSb/InSb quantum well structures on GaAs and GaSb substrates AlInAs/InGaAs/GaAsSb structures on InP substrates Growths are routinely monitored by RHEED with a 15 keV electron gun from Staib and a CCD camera connected to a PC with the ksA400 analysis software The MBE system is also equipped with a mass spectrometer, an Ircon MODLINE 3 pyrometer, growth chamber, a separate transfer, an outgas, and an introduction chamber. CURRENTLY INSTALLED AND RUNNING.

molecular beam epitaxy system Total runs: 205 Materials used: Indium, gallium, aluminum, arsenic, phosphorus, and beryllium Silicon as dopants for InGaAsP compound materials Specifications: Source ports: (6) 8" source ports (10" from chamber to 8" at water jacket) (3) 6" source ports (8" from chamber to 6" at water jacket) (1) 10" source port (no water jacket) Manipulator: dual filament, (2) DC supplies Preparation furnace: single filament, (1) DC supply Cell 1: KPC1200 phosphorus cracker APC6000 valve controller P-red zones (2) DC power supplies Cell 2: Aluminum cell: 700cc dual filament effusion cells (8" mounting flange) Cool lip (2) DC power supplies Cell 3: Indium cell, 700cc dual filament effusion cells (8" mounting flange) As-cracker cell (2) DC power supplies Cell 4: Aluminum cell: 700cc dual filament effusion cells (8" mounting flange) Cool lip (2) DC power supplies Cell 5: Gallium cell, 700cc dual filament effusion cells (8" mounting flange) (2) DC power supplies Cell 6: 7000V As Mark IV valved cracker Automated valve positioner (2) DC power supplies for As-cracker and As-bulk Cell 7: Gallium cell, 700cc dual filament effusion cells (8" mounting flange) (2) DC power supplies Cell 8: Silicon dopant cell, 75cc single filament effusion dopant cells (6" mounting flange) Single DC power supply Cell 9: Indium cell, 700cc dual filament effusion cells (8" mounting flange) (2) DC power supplies Cell 8: Beryllium dopant cell, 75cc single filament effusion dopant cells (6" mounting flange) Single DC power supply Spare cell 1: Aluminum, dual filament Spare cell 2: Aluminum, dual filament Spare crucibles: (4) 700cc PBN crucibles Molybdenum platens: various 11 x 2", 4 x 3", 3 x 3" platens Growth chamber: Vacuum gauge Flux gauge, automated flux gauge controller Cryo-Torr 10 cryopump, CTI9600 compressor VARIAN ion pump, VARIAN dual controller TSP pump, Titanium sublimator controller 2006 De-gas station / preparation chamber: Vacuum gauge: VARIAN dual controller VARIAN ion pump TSP pump, RIBER TSP controller 2006 Loading chamber: CTI CT-8 cryopump, CTI 9600 compressor VARIAN TriScroll scroll pump Unloading chamber: CTI CT-8 cryopump, CTI 9600 compressor Spare pump: VARIAN Turbo-V 2000HT, controller, connector, reducer, gate valve RHEED gun: STAIB INSTRUMENT 15kV electron gun, 2" RHEED screen STANFORD RESEARCH SYSTEMS RGA 200 Heated viewport: EPI 4.5", heater power controller Computer control software: (2) computers CRYSTAL v2.1: growth control software PC3000: 24-channel PID control software AUTOMATE v1.0: transfer control software Shutter control: RIBER shutter control Valve controllers: (1) RIBER phosphorus valve (1) EPI arsenic valve (not included) Phase separator: LN2 tank, VBC LN2 controller, (4) lines in, (4) lines out, VBR flexible lines RIBER CP9 cryopump temperature monitor Water cooling: interlocked lines through 9 cells with N2 purge flow controls (6) Electronic controlling cabinets RIBER automated transfer system Chamber baking jacket and heaters: Whole set to cover the vacuum chambers 3-Phase transformer: 220V, 380V output IRCON pyrometer: MODLINE 3V pyrometer with controller Range: 400 to 1200°C Can be inspected and demonstrated 2001 vintage.

System. 3 chamber, 8 Max Cell, DHEED, MAS The system was deinstalled and warehoused 8 cell max(one of them is ECR) There are shutters, but they were installed by the previous owner, not the maker Heater 800° Max, reg. 300-500° Znse and GaAsP were used Turbo pump is broken and needs to be fixed Tool needs to be de-contaminated Currently de-installed As-is, where-is 1989 vintage.

MBE System Summary specification Deposition Chamber: Vertical deposition chamber (2)Main viewports (8”OD) with shutters (1) Viewport (4”OD) with shutter Ports configured for manipulator, source shutters, RHEED port (8”OD), (3) mass spec head gauges, pumping systems, ionization gauge, and transfer line. Symmetrical array of 10 source ports (6”OD) configured for individual beam source, Pyrometer viewport and shutter for direct wafer viewing, deposition chamber cryopanelling, cryopump with gatevalve, varien diffusion pump, and ionization gauge. Main gatevalve to preparation chamber. Preparation Chamber: Ports configured for cassette entry chamber, valve/sample lift mechanisms, wafer outgassing facility, cassette transfer mechanism, pumping system, ionization gauge and transfer line, Preparation Chamber vacuum system, ion pump and power supply, remote operation of motor drive with independent “at position” sensing, “sample hands off” mechanism at all transfer stages, Buffer outgassing stage, duel fast entry locks (FEL) for quick introduction and retrieval of wafers from the system. Cassette entry stage: Cassette quick access door, cassette lift mechanism with motor drive and remote system, cassette for up to six wafer platens. Cassette entry lock pumping system, turbomolecular pump with isolation valve, and cassette entry vacuum ionization Wafer platens (Qty 9) 1x6” molybdenum wafer holders (Qty 6) 5x3” molybdenum wafer holders Heater assembly with thyristor drive unit, power supply and control system. Deposition Facilities: Sample Manipulator, with motor drive, remote control, sample hand-off mechanism with motorized actuator and control unit, automatic optical pyrometer. VG Thermo cell” 2 (gallium) effusion cells including sumo PBN crucibles VG Thermo cell” 2 ( indium) effusion cells VG Thermo cell” 2 (aluminum) effusion cells including PBN sumo crucibles VG Thermo cell” 2 (silicon) doping cells with 40cc PBN crucibles VG Thermo cell” 1 (beryllium) doping cell with 40cc PBN crucible VEECO Arsenic cracker containing arsenic charge Thyristor drive units and transformers for operation of effusion sources and deposition stage manipulator, 10 pneumatic soft-action source shutters, shutter control module Monitoring Facilities: Phosphor screen, viewport and shutter Monitoring ionization gauge System Bench, Bakeout and Electronics Rack: Buffer chamber bench assembly housing power distribution unit, power and water interlock, vacuum pump control units, ionization gauge control units, sublimation control units, system bakeout control unit. Bakeout system: Flat panel bakeout oven, fan assisted heaters with ducting and power supplies to provide recirculated hot-air bakeout, temperature and time control system. MBE instrumentation electronics rack, housing: Power distribution unit, temperature controller (PC3000) RHEED control unit, mass spectrometer controller, shutter control module, substrate rotation control Included: Computer desk Quadrupole mass spectrometer Control unit for deposition chamber Controller for cassette entry stage Monitoring ion gauge controller Control system, Pentium-based IBM PC computer, OS/2 operating system VG Semicon software and interfaces for MBE control of effusion sources shutters Not included: RHEED gun/controller 15KeV RHEED system Items that are removed and could possibly be returned: 1-15 KeV RHEED gun and power supply De-commissioned in 2008, shrink wrapped and ready to ship.

MBE System, 4" platen capable of holding one 4" wafer, one 3" wafer, one 2” wafer or three 2" wafers, (Qty 3) chambers, independent pumping and control, deposition chamber has capacity for ten sources , and incorporates all of the necessary components for the controlled growth and doping of III-V materials, buffer chamber is equipped with optional single-platen outgassing facility, cassette entry chamber allows rapid loading and unloading of cassettes of six wafer platens and is equipped with cassette outgassing facilities, wafer transport is semi-automated with user interaction by remote, hand-held actuators, material growth is controlled by the X-Gen" computer control system, featuring interactive and recipe driven interaction with the MBE system, barely used for R&D, currently equipped with III group element (Indium, Gallium, and Aluminum) and V group element (P from GaP decomposed and Arsenic), also Nitrogen plasma source, Ultra-high vacuum system with large capacity pumping system, MBE can be used for the III-V material epitaxial growth such as As-based, P-based, and N-Based materials for all optoelectronic materials, system is with automatic shutter system. Still installed and under vacuum in a clean room (but production gasses are not connected). 2002 vintage.

MBE Reactor chamber (1991 vintage), with PERKIN ELMER 425B electronics (1985 vintage) Equipment has been used to grow high purity: GaAs AlGaAs InGaAs AlInAs AlGaAs/GaAs high quality AlInAs/InGaAs HEMT PIN diode APD material structures High performance HEMT, PIN diodes and APD have been fabricated from grown material System is currently under vacuum.