MOCVD Reactor, used for GaN and AIN deposition Upgraded in 1998 to hold 3" and 4" wafers with RF heating for high temperature operation Platter configured for 1x4" Max growth temperature: ~1200°C RF power generator: 3 Phase, 480 V, 30 KVA Quartzware and spares Currently has 3 chiller bath units, there is room for 5 Does not have in-situ measurement capability 6 gas channels and 5 MO channels Omega blackbody calibration unit EPISON 208AC, 36KVA Version 9 (OS9) AIXTRON operating system Graphical user interface based on a WIN3.11 PC control S/W "CACE" There is room for 5 MO bubblers under the condition that they are all kept in Lauda extra narrow chiller baths Maintenance performed by owner, upgrades performed by AIXTRON Previous use was R&D Was operational when deinstalled in 2008. Was flushed with inert gases Oil based process pump System was used moderately Currently shrink-wrapped in storage Configuration: 1x3” RF heated Computer controlled Includes: Spare reactor assembly Spare graphite parts Manuals and Diagrams Regenerative glove box with electronic control Additional chamber with other miscellaneous spare parts. Good working order 1990 vintage.

MOCVD Reactor, 15x2" or 8x3" configuration. Temperature: up to 850°C, Configured as: 2 Ga lines, 2 In, 2 Al, 1 Mg, 1 Zn, , 1 spare, 2 As, 1 Ph, 1 Si2H6, 1 HCl, 1 spare, Still installed but N2 and H2 are disconnected, as is, 1992 vintage. The end-user is no longer using it because they have changed their product line. The MOCVD reactor can still be turned on. But some functions cannot be performed without N2 gas being connected. Estimated usage of this reactor is around 4000 hours. The system was purged with N2 before shut down. Previous owner will help to clean the exhaust system, when the system is purchased. The gases used were: Arsine, Phosphine, DiSi2H6, HCl. Used for AlInGaP LEDs. Has been upgraded to CASE operating system (from OS9), uses a Windows system.

MOCVD reactor.

MOCVD system, parts tool Specification: Vacuum load lock unit Glovebox LEYBOLD Trivac pump Control racks EUROTHERM reactor temperature controller MKS 600 reactor pressure controller Gas management cabinet PANAMETRICS system 5 hygrometer Gas cabinet A2-Ste scrubbing unit Additional spare parts Power requirements: 3-phase + N, PE, 50Hz, 400V, 25kVA 1998 vintage.

MOVPE crystal growth system Specifications: 2-Glove lock module AIXTOX A2-Ste Scrubbing system AIXTRON FMS-8700 Gas monitor Facilities requirements: Line voltage: (3) 380/220V, 50Hz Maximum power consumption: 15 kVa Line connector: CEE 32-6h Liquid coolant: Water Connectors (inlet/outlet): 10 mm Flow: 2 to 4 L/min (0.5 to 1 gpm) Temperature range: 5°C to 30°C (41 to 86°F) Environmental conditions: Temperature Range: 10°C to 23°C (50 to 73.4°F) Humidity < 85% rel Overall dimensions: 3600 x 800 x 1950 mm Weight: 2000 kg.

MOVPE crystal growth system Specifications: 4-Glove lock module Control rack Reactor pressure and reactor temperature displays AIX-PD controller Circular stainless steel casing (water cooled) Reactor lid Reactor ring Reactor bottom Ceiling quartz plate separates internal reactor volume from reactor lid (3) Double O-ring systems Rotating planetary disk (main rotation) Satellite disks (wafer carriers) concentrically arranged on planetary disk Waste gas exhaust collector ring (2) Quartz pipes connect exhaust gas collector ring to vacuum system RF induction coil heats graphite planetary disk Quartz plate diffusion barrier between planetary and RF induction coil Dimensions (L x W x H): 6 x 1.4 x 2.1 m 2001 vintage.

Oxide module MOCVD system, 8" Peripheral Support Equip: BOC Edwards iH1000 Vacuum Pump Reidel WTS200.05-NES Chiller Alcatel Adixen ACP15 Vacuum Pump Ansul IQ-301 Fire Suppression System 2006 vintage.

PECVD part, 2002 vintage.

PECVD system, 1996 vintage.

PECVD system, 1997 vintage.