Used RIBER EVA 32 #9197264 for sale

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Manufacturer
RIBER
Model
EVA 32
ID: 9197264
Wafer Size: 2"
MBE System, 2" Group IV MBE Grow germanium and silicon Semiconductor thin films (SiGe) B & Sb as P- & n- type dopant RHEED System with power supply and control​ Residual gas analyzer & control (RGA / Mass spectrometer)​ ​XYZ Precision sample stage / Manipulator​ Sentinel flux motoring system with power supply and control​​ Load-lock chamber (2) 40 CC E-guns (Ge & Si) (3) Effusion cells with controls Sb Boric acid Ge Residual gas analyzer (Quadruple mass spec) RHEED Electronics control Manipulator wafers, 2" Load lock chamber Ion pump plus cryopump.
RIBER EVA 32 is an advanced molecular beam epitaxy (MBE) system used for epitaxial growth of high-quality inorganic materials including III-V, II-VI, and oxides onto substrates. It is capable of atomic and surface control of the material's growth structure. EVA 32 is equipped with multiple, independent, state-of-the-art chambers designed to provide the maximum degree of freedom for epitaxial growth of various heterostructures and nanostructures. The system is an array of several ultra-high vacuum modules, each of which is equipped with high-precision, low-temperature resistive heaters. The individual modules include the main source chamber, two effusion cells, two ultra-violet light sources, and independent temperature controllers. In each of these modules, different growth parameters can be controlled to allow for precise growth of nanostructures. The main source chamber is the primary chamber which contains the growth surface and the source materials. The substrate holders are thermally coupled to the source chamber and heated by high-precision, low-temperature resistive heaters. The main source chamber is equipped with sensors to measure various parameters such as temperature, pressure, composition, growth rate, etc. The two effusion cells are mounted in the main source chamber and are used for the evaporation of materials. The cells are positioned perpendicular to the growth surface and are able to cover the entire surface. In the case of MBE growth, the effusion cells contain the materials used as source materials for the epitaxy process. The two ultra-violet light sources are mounted in the main source chamber, perpendicular to the growth surface and with an adjustable tilt angle. These light sources can provide a wide range of energy intensity in order to manipulate the growth conditions. The temperature controllers are used to regulate the growth temperature of the substrate and material inside the main source chamber. These controllers are electric-resistive heaters which can be set at temperatures between 300 and 800 degrees Celsius. The heaters are finely-tuned to achieve accurate temperature control and to provide desired growth conditions. RIBER EVA 32 is a dedicated MBE system that can help perform highly-controlled fabrication of heterostructures and nanostructures. Its many modules and precise control of parameters provide the ultimate flexibility in the production of high-quality materials.
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