Used VG SEMICON / OXFORD V90 #9200463 for sale

VG SEMICON / OXFORD V90 is a molecular beam epitaxy equipment specifically tailored to the production of integrated circuits, optoelectronic components, and other complex nanostructured materials. The system is capable of high growth rates, very low temperature, and precise control of growth parameters. It is built to withstand extended periods of operation with minimal maintenance requirements. The unit contains an ultra-high vacuum chamber, a source chamber, a sample chamber, and a beam line. The ultra-high vacuum chamber allows for the deposition of metals and other materials at extremely low vacuum pressures in the range of 10-9 to 10-10 Torr. The source chamber end of the machine is equipped with a gun, or source, which atomizes the material being deposited and then ejects it into the main chamber. The sample chamber contains the heated Silicon wafer, which is placed on a holder below the beam line and is the target substrate. A high-voltage powered monitor gun is used to measure the molecular beam incident onto the sample holder. The position of the holder and the angle of the beam can then be precisely adjusted, ensuring a uniform coverage over the surface of the sample. The beam is then attenuated through a series of baffles that optimise the growth rate of the material being deposited. The tool is also capable of creating high aspect ratio structures, including vias and various other structures that are important for the production of advanced circuits and optoelectronic components. This is achieved by employing three different growth techniques: Layer Transfer, Modulated Epitaxy, and Atomic Layer Deposition. Layer Transfer involves the transfer of layers from the growth substrate to the substrate to be patterned. This is done by applying a local electric field that lifts the material from the growth substrate to the target substrate. Modulated Epitaxy ensures that each layer consists of individual atoms, eliminating any repulsive forces that would normally occur between atoms of the same type. Finally, Atomic Layer Depposition involves the deposition of atomic layers one by one to build up complex structures. OXFORD V90 replaces traditional silicon growth methods, allowing for the production of more complex electronic components and structures with greater control over parameters such as growth rate, temperature, and composition. By using VG SEMICON V90, users are also able to decrease the cost associated with the production of nanopatterned materials and reduce the time required for the production of complicated structures.