Used AIXTRON 2800 G4 HT #9194705 for sale
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ID: 9194705
Vintage: 2010
MOCVD Systems
Configuration:
GMS
Constant temperature MO sources (2 RM25 & 5 RM6)
Run / Vent pressure difference balance
In-MO source density monitor
(3) NH3 Configuration
H2 & N2 Testing equipment
Monitoring system:
EpicurveTT: Wafer curvature monitoring
Photrix: Wafer surface temperature monitoring
Optrics: Ceiling temperature monitoring
Rotation and satellite rotation:
Main rotation: Motor controller
Satellite rotation: Gas drive and single controller
Reaction chamber information:
11 x 4’’ Structure
Fixed heating coil
Water cooling triple injector
Injector purge
Controller:
PLC: Controller logix from AB
SCS from AIXTRON
2010 vintage.
AIXTRON 2800 G4 HT is a powerful and efficient chemical vapour deposition (CVD) reactor equiped with the latest advancements in the field. This reactor offers reliable performance and productivity and can be applied in a wide range of materials and applications. It is suitable for processing a variety of materials such as graphene, nanowires, nanotubes, semiconductors and composite thin films. The reactor is powered by a unique nanofabrication technology that offers maximum precision and control. It features a multi-layer lid system, a segmented cold wall, a PC-controlled gas box and a hot edge-source end-plug. This combination of features allows for rapid, repeatable and uniform layers of material, and makes it ideal for research and development of innovative technologies. AIXTRON 2800G4 HT is engineered with a high temperature range of up to 1200°C, which enables a faster process cycle time and higher throughput than other CVD reactors in the market. This is achieved through a proprietary design featuring air-intake and exhaust passages for the deposition chamber, a heated end-plug and a conditioned gas box. The gas box enables accurate temperature control and rapid reaction rate by providing a controlled inert atmosphere. Additionally, the same chamber is used for different substrates and allows for quick and easy exchange of substrates. The lid system facilitates deposition at the highest possible temperatures ensuring excellent repeatability and uniformity. The lid itself is segmented into two or more parts and each layer is separately heated for precise temperature control. The hot edge-source end-plug enables efficient material distribution and more uniform deposition on the substrate surface. All these features make 2800 G4 HT the most advanced CVD reactor in the market. It provides an optimal platform for research and development teams to facilitate the production of thin films, nanostructures and other materials with unprecedented quality and precision.
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