Used AIXTRON 2400 G2 #9191574 for sale

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Manufacturer
AIXTRON
Model
2400 G2
ID: 9191574
Reactor InGaAsP Wafer capacity: Heat package not included Wafer configuration: 15x2", 11 x 2", 8x3", 5x4" Gas supply: N2 6.0, H2 Pd-Diffused, AsH3 100% PH3 100%, SiH4 100% Pinlet each 3-3, 5 bars Carrier gas consumption < 20 l/min Forming gas: 5%-10% H2 in N2 Pneumatic: N2 Techn, 7-9 bars Cabinet ventilation: 2 x 1000 m3/h Water cooling: Total flow 4 l/min at Tinlet, < 25°C Pinlet, < 6 bars Differential pressure > 4 bars Power supply: 3Ph, 60Hz, 480VAC, ±5%-60 kVA (Heater) 3N/Ph, 60 Hz, 208VAC, ±5%-20 kVA (Electronics) (or) 3N/Ph, 50Hz, 400AC, ±5%-80 kVA.
AIXTRON AIX 2400 G2 is a high-performance reactor designed for the production of large volume and high-quality deposits. It is based on the company's patented CVD-MOCVD production technology and can handle the full range of deposition processes for oxide, nitride, and compound semiconductor materials. The reactor consists of a rotating susceptor, two thermal zone heating systems, and sophisticated process control capabilities. The rotating susceptor is a large-diameter, free-floating disc that is mounted on a ladder-style frame and can rotate up to 400 revolutions per minute. This design provides uniform and consistent thin film deposition and increased productivity as it allows for multiple process runs. The two thermal zones consist of a graphite susceptor, wrapped with a resistive heating element for the deposition zone and a resistive heater to provide the high temperature annealing process. Both thermal zones are adjustable and can be tuned to the specific deposition parameters. The sophisticated process control capabilities enable accurate and reliable fine-tuning of the processes, ensuring high-quality films with excellent uniformity and repeatability. Additionally, the reactor is equipped with precise gas control systems using a comprehensive set of process gas sources, valves, and flow meters for closed-loop control of reactant flows. This features result in high-throughput processing of a wide variety of materials. AIX 2400 G2 is an ideal tool for those requiring maximum productivity and high-quality films from deposition and annealing processes. Its compact design allows for easy integration into a production environment and combines the benefits of high thermal stability, accurate gas control, and reliable process control. As such, it provides superior performance in the production of thin films for various applications, such as optoelectronic and microelectronic devices, displays, and other semiconductor devices.
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