Used AIXTRON Crius 31x2" #9186414 for sale

AIXTRON Crius 31x2 is a next-generation high-power reactor designed for crystal growth applications. It is a down-stream platen, horizontal Czochralski type reactor that employs a two-zone crucible heating process for crystal growth. This reactor utilizes a pyrometer-controlled heating profile to regulate furnace temperatures from 660 to 2400°C. This offers precise temperature control for a wide range of materials including semiconductors and optical materials. The Crius reactor is equipped with a gas inlet system and can easily support a variety of inert or working gases. This system allows oxidation or gettering of crystals inside the furnace as required. In addition, the reactor comes with a controlled atmosphere and nitrogen purge capabilities, making it suitable for any growth environment. The reactor includes an SCR-controlled power supply, which offers high frequency performance and low harmonic distortion, reducing ripple and input voltage fluctuations, and keeping the effective power supply within 0.5% of the set voltage. The reactor is constructed with all-alloy materials, including steels and stainless steels, and is designed with minimized thermal stresses which increases its service life. The Crius reactor also has very low thermal drift and excellent stability, allowing for low-temperature controlled applications. Furthermore, the Crius 31x2 has a modular design that allows for easy integration of various process tools, such as in situ gas analyzers, thermal imaging systems, and other process monitoring tools by providing monitoring access ports and data logging capabilities. This reactor has a programmable ramp rate and automatic peak temperature adjustment capabilities to maintain a precise temperature profile, ensuring crystal growth with excellent homogeneity and uniformity. The Crius 31x2 features a wide chamber size, with a high material throughput capacity, making it ideal for high-production applications. The reactor includes a chamber temperature uniformity of ±3°C and ±0.2°C temperature stability, even when changing material loading or gas flow. It is reliable, efficient, and user-friendly, offering a safe crystal growth environment.