Used AIXTRON G3 #9202634 for sale

AIXTRON G3 is a state-of-the-art molecular beam epitaxy (MBE) reactor. Built by AIXTRON, this reactor is one of the latest in a series of MBE systems. AIXTRON G 3 reactor is designed to facilitate high-precision growth of a variety of crystalline materials, including III-V semiconductors. G3 reactor consists of two major components: the process chamber and the throttle valve. The process chamber houses the source material and is the site at which molecular beam epitaxy takes place. Inside the chamber is a series of internal baffles and evaporators which help control the emissions from the source material. The throttle valve regulates the amount of gas being delivered to the process chamber, and is also the means via which the pressure inside the process chamber is regulated. G 3 reactor is equipped with several advanced features that make it suitable for high-precision material growth. These features include an advanced particle counting system which monitors the quality of the epitaxial film and environmental controls which allow for precise control over the temperature and flow rates. The transistor geometry design helps to minimize the risk of product contamination. In addition, AIXTRON G3 reactor can be customized in many ways to suit the customer's needs. This includes adding additional end-point detectors, as well as incorporating additional component and safety features. AIXTRON G 3 reactor is also capable of producing high-quality samples on a wide range of substrates including silicon, gallium arsenide, gallium nitride, and various III-V materials. In conclusion, G3 is a state-of-the-art MBE reactor with many advanced features. It is designed to produce high-precision materials on a variety of substrates and can be customized to suit customer needs. This makes it an ideal choice when it comes to producing the highest-quality crystalline materials.