Used AMAT / APPLIED MATERIALS Centura ACP RP #9168768 for sale
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ID: 9168768
Wafer Size: 12"
Vintage: 2008
EPI System, 12"
Includes: HDD
Factory interface options:
Wafer transfer robot: YASKAWA Robot
Load port types: TDK25 Wafer FOUP V2
(3) Loadports
Power supply:
FFU 208 VAC
Controller 110 VAC
ULPA Filter: PTFE Boron free ULPA
Orienter: Pre aligner
End effecter: Edge grip PEEK material
Remote options:
Monitor 1: 17" Flat panel with keyboard on ergo arm
Mainframe options:
Mainframe type: ACP BLOCK 2
Loadlocks: Batch loadlock
Chamber interface: Vented stainless steel insert and door with viton
DVR Record license
Water hose fittings: Yes
Water module stand: Yes
Upper frame H2 leak detector: Yes
Chamber A/B: (RH3) Reduced pressure EPI
Lamp type: USHIO BNA8
MFC: UNIT 8561
Pump purge: Yes
Regulator and displays: Transducers and regulators
Transducer display type: SI (KPA)
H2 Leak detector: Single
H2 50slm
H2 10slm
HCL 500sccm
HCL 15slm
SiH4 500sccm
SiH2Cl2 500sccm
GeH4 500sccm
Direct dopant x 2 line
Dopant mixer 2line
Spare 1 line 100sccm
Aux GeH4 line 100sccm
Currently warehoused
2008 vintag
AMAT / APPLIED MATERIALS Centura ACP RP (RapidPulse) plasma-enhanced chemical vapor deposition (PECVD) reactor is a high-performance, multi-chamber platform for the deposition of thin films for the semiconductor fabrication industry. AMAT Centura ACP RP is capable of depositing a wide range of material layers such as oxides, nitrides, diamond-like, as well as dopants, for the device production process. APPLIED MATERIALS Centura ACP RP features a single-wafer cleaning zone and a heated, in-situ electron-cyclotron-resonance (ECR) source. The source creates ionized species and radicals that bombard the substrate for optimum surface activation and increased adhesion. The ACP RP also features an advanced process system providing superior temperature control, uniform films and minimized process complexity. It integrates RF susceptor heating and overhead cooling with precision temperature accuracy to maintain uniformity between nanometer-scale dies and full wafers. Supplied with a wide range of in situ sensing and control systems including plasma emission sensors, quadrant part pressure sensors, thermal sensors, ion gauges, and dedicated process control systems, the reactor is designed to precisely monitor substrate temperature and process chamber pressure at all times. In addition, the ACP RP's load-lock chambers enable wafers to be automatically loaded and unloaded from the wafer holders without compromising process quality. This helps ensure uniform process results while eliminating the debris that can occur with manual loading and unloading. Furthermore, the ACP RP's modular design enables wafer holders to be replaced, and the reactor's wafer handling can be customized to meet device requirements. Centura ACP RP provides excellent performance and reliability, with yields that exceed industry standards. With its high throughput, low footprint, and advanced process control capabilities, the ACP RP is the perfect choice for the demanding semiconductor production environments.
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