Used AMAT / APPLIED MATERIALS Endura CL #9170919 for sale

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ID: 9170919
Wafer Size: 12"
Vintage: 2002
PVD System, 12" Mainbody type: CL (Classic) Chamber A: For Al-Cu PVD chamber DCPS: Master, OPTIMA DCG-200, ENI, for PA D Slave, OPTIMA DCG-200, E.VI SICERA / SHI KZ-8 L3C Cryo pump HT ESC Type stage Ar: 200/20 Sccm Chamber B: Chamber only for PVD Chamber C: For TiN PVD chamber DCPS: OPTIMA DCG-200, ENI SICERA / SHI KZ-8 L3C Cryo pump A101 Type stage Ar/N2: 150/200 Sccm Chamber D: For pre-CLN chamber, PCXT RFPS: GHW-12A/GMW-25A, ENI, for BIAS / SLA SICERA / SHI KZ-8 L3C Cryo pump Ar: 200/20 Sccm Chamber E, F: For DEGAS, Plate heater SICERA / SHI KZ-8 L3C Cryo pump Ar, Pressure controlled Missing parts 2002 vintage.
AMAT / APPLIED MATERIALS Endura CL Reactor is a rapid thermal processing (RTP) equipment designed for semiconductor wafer processing and other thin-film fabrication applications. It is a chemical vapor deposition system that can be used to apply films of various materials to a variety of substrates. The chamber is designed to provide uniform temperature distribution across the substrate and uniform processing with precise control of thermal energy transfer. The unit features automatic substrate handling, a low-pressure valve to vary process times and gas usage, and an integrated pyrometer for accurate temperature control. AMAT Endura CL Reactor is equipped with four standard elements consisting of a quartz tube, quartz reflector, quartz windows, and silicon heaters. The quartz tube houses the process gas and ensures uniform gas distribution to the substrate during deposition. The quartz reflector operates to reflect and homogenize the thermal energy generated to the substrate and the rest of the chamber walls. The quartz windows act as transparent seals that allow view of the process from outside the chamber. The silicon heaters provide thermal control for the process, and are thermally isolated from the reaction chamber for efficient heat transfer. The machine is designed to operate in a kilovolt range and has a maximum temperature of 1150°C. It also incorporates a high-performance multi-zone control tool that allows for accurate temperature control and uniform temperature distribution inside the chamber. The asset is capable of controlling both pressure and temperature, as well as the flow rate of the process gases. APPLIED MATERIALS Endura CL Reactor is designed for repeatable, reliable, and reproducible deposition processes. It is capable of depositing a wide range of materials onto a variety of substrates, including oxide, metals, and semiconductor materials for use in a diversity of semiconductor device applications. This model offers a wide process window for operation with a broad range of gases, making it an ideal equipment for a variety of semiconductor and other thin-film development processes.
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