Used NOVELLUS CONCEPT One #150904 for sale

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Manufacturer
NOVELLUS
Model
CONCEPT One
ID: 150904
Wafer Size: 8"
Vintage: 1991
CVD System, 8" Process types: Undoped silane-base oxide Silicon nitride (2) Stages Transfer system: One arm robot Wafer on paddle sensor Cooling stage Software version: 4.431 RF Generator: ENI OEM 50, 13.56 MHz ENI PL-2HF, 400 kHz Match network: TRAZAR AMU2B-1 Match box Pressure control: TYLAN MDVHX-100B heated throttle valve with temperature controller TYLAN Throttle valve controller Independent gas cabinet Gas configuration: Mass flow controller: UNIT Gas types: N2, SiH4, C2F6, O2, NH3 Remote power AC box Currently warehoused 1991 vintage.
NOVELLUS CONCEPT One is a state of the art, advanced atomic layering deposition (ALD) reactor designed for the high-volume production of thin, highly uniform films. The reactor is an enabling platform for the commercial manufacturing of advanced electronics. It features a high-throughput chamber with a large substrate holder. This enables production of a wide range of semiconductor materials and devices including memory devices, elastomers, and sensors. ALD is an advanced thin-film deposition process used in the manufacture of electronic components. The ALD process is used to deposit atomic layers of material, one at a time, onto the topography of a substrate material. This level of control allows for extremely precise and uniform thin-film deposition over wide areas. ALD is ideal for the production of thin-film transistors, memory devices, light emitters, and micro-machined actuators. NOVELLUS CONCEPT ONE is a custom-designed ALD reactor. It can process up to 100 wafers per hour and is capable of application specific film formulations. It provides consistent wafer-to-wafer thickness control, up to 0.2nm, and non-volatile memory for easy process development. CONCEPT One is composed of four main components: the reactor head, reactor chamber, computer controlled valve, and transport system. The reactor head holds the cathode and anode which are used to deposit and control the flow of electrical current. The reactor chamber is where the substrate is located and contains the gas delivery system which injects the reactants into the chamber. The valve controls the flow of gases and is monitored and adjusted by the computer. Finally, the transport system moves the substrates through the reactor for ultra-uniform speed and temperature control. CONCEPT ONE is capable of depositing a variety of materials including metals, oxides, nitrides, and an extensive range of semiconductor materials such as Photovoltaic materials, CIGS, CIS, and other advanced semiconductor materials. This enables production of a wide range of advanced electronic products including sensors and semiconductor devices. In conclusion, NOVELLUS CONCEPT One is an advanced ALD reactor designed for high-volume production of ultra-thin and uniform films. Its features include high-throughput, consistent wafer-to-wafer thickness control, and the ability to process a wide range of materials. This has enabled the commercial manufacturing of a wide range of advanced electronic components.
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