Used TEL / TOKYO ELECTRON Alpha 808S #9058014 for sale

TEL / TOKYO ELECTRON Alpha 808S diffusion furnace is an advanced, high-specification tool for the deposition of thin films. It features a circumferential and vertical arrangement of heating sources, allowing for uniform heat distribution and more efficient deposition of thin films. The single furnace provides a wide temperature range, from 100°C to 1100°C. The accurate temperature control makes this furnace suitable for many demanding thin film applications, such as advanced semiconductors and photovoltaics. The furnace is also designed to meet stringent safety standards, with alarms that alert technicians when potential maintenance issues, such as uneven temperature, are detected. Additionally, the housing is designed to protect personnel from any potential hazardous emissions and the ceramic ribbon heating elements are designed to optimize energy efficiency. TEL Alpha 808S diffusion furnace is designed with a removable process chamber, allowing it to be serviced without the hassle of moving the entire unit. Dielectric coils provide uniform heating for the best process results. The chamber has a horizontal lifting mechanism, which ensures accurate alignment and provides the flexibility to process both small and large substrates. TOKYO ELECTRON Alpha 808S also includes a range of additional accessories. For example, automated substrate handling systems can be added, allowing for an efficient and accurate transfer of work pieces. A cooling gas system helps maintain uniformity during the cooling process, while a graphite-thermocouple holder improves the temperature uniformity of larger substrates. Process traceability is also easy, with integrated data logging system monitoring the entire fabrication process. Overall, Alpha 808S diffusion furnace is a powerful tool for the deposition of thin films with its advanced heating technology, accurate temperature control, and additional accessories. Its efficient processes, superior uniformity, and enhanced safety make it an ideal choice for the production of advanced semiconductors in high volume.