Used ALLWIN21 AW 1008 #9201817 for sale
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ID: 9201817
Wafer Size: 3"- 6"
Plasma etcher, 3"- 6"
Wafer loading: 3-Axis robot
Plasma power: Microwave
Types:
Parallel
Single wafer process
Gas Lines: 1-4
Production-proven plasma stripper / Asher system
Frontside and backside isotropic removal
Microwave 1000W: 2.45GHz
Pressure control with throttle valve
Main frame with breakers, relays and wires
Keyboard, mouse, cables
EMO, interlocks, and watchdog function
Quartz tray:
3-4 inch, 4-6 inch, 5 inch, 6 inch, others
Fixed cassette stations:
One station
Two stations
Lamp heat module and quartz window
6" Quartz showerhead and 5" diffusion disk
Main control
Distributor PCB and DC
Integrated solid robot: H1-7 x 10.5
Waveguide and quartz plasma tube
Chamber top plate and body:
Close loop temperature control (CLTC)
Blowers:
Magnetron
Waveguide
MFCs:
1 MFC, 2 MFCs, 3 MFCs, 4 MFCs
CLTC:
AC Box
Lamp control PCB
Main vacuum valves:
Fast pump: Two, one
Slow pump: One
MKS Baratron
Throttle valve
Front EMO, interlocks
Touch screen GUI, 15"
Options:
EOP Module with PCB
Lamp tower alarm function
Vacuum pump
Downstream ashing: NO
Bulk resist removal
Single wafer process
High-dose implanted resist
Non-oxidizing metal processing
Descum
Pressure: 1.75 to 2.5 Torr
Gas flow:
O2: 4.5 SLPM
N2: 0.5 SLPM
Variable lamp time: 0-9999 seconds (AW)
Variable temperature: 150°C – 350°C
Vacuum chamber pump: 165 cfm
Cabinet exhaust: >250 cfm
Plumbed gases:
O2
N2
Asher rate: 1.5u-5u/min
Positive photoresist: >8u/min
Negative
Photoresist
Uniformity: 15% Process dependent
Particulate: <0.05 /cm2
Selectivity: >1000:1
MTBF / MTTN / MTTR: 450 Hours / 100 Hours / 3.5 Hours or better 95%
Electrical requirements:
208VAC
3 Phase
60Hz
30Amps.
ALLWIN21 AW 1008 is a rapid thermal processor designed for fast, precise, and reliable thermoelectric processing of substrates up to 8 inches in size. This equipment is suited for transforming crystalline silicon into a variety of products such as power devices, integrated circuits (ICs), and thin-film transistors (TFTs). It can also be used for removing dopants, growing extremely thin gate oxides, passivating inter-level dielectrics, planarizing, and cleaning substrates for subsequent applications. AW 1008 rapid thermal processor features a low thermal budget of 0.5 milliWatt-Seconds for greater process fidelity. It also offers precise temperature control and fast thermal response with its Rapid Temperature Programming (RTP) feature. RTP enables the processor to adjust temperatures to weekly setpoints with high speed, accuracy, and repeatability. The system employs a heated response chamber and a heated chuck for uniform temperature distribution and efficient heat transfer to the substrate. The unit also features a dedicated thermocouple that uses an advanced isolated thermopile to monitor and control the temperature of the substrate in real time. The temperature range of the machine can be regulated from -270°C to 1100°C, and the temperature accuracy is within +/- 1°C. ALLWIN21 AW 1008 rapid thermal processor also includes other convenience features such as automatic gas flow control and plasma etch capability. Additionally, an optional one-touch recipe memory allows you to store up to 10 preset process recipes for easy retrieval. The processor is also equipped with a touch-panel control console that allows users to monitor and adjust the process parameters. This processor is ideal for a wide range of thermal processing applications such as oxide annealing, gate oxide etching, gate oxidation, plasma-assisted thermal processes, doping, passivation, active-area cleaning, and inter-level dielectric deposition. It is compatible with standard 200mm wafers and substrates such as silicon, silicon germanium, and gallium nitride. Overall, AW 1008 is a reliable and efficient rapid thermal processor designed to provide excellent temperature control, fast response times, and improved process accuracy for a wide range of applications.
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