Used AIXTRON AIX 2600 G3 HT #9352600 for sale

AIXTRON AIX 2600 G3 HT is a modular, high-power, molecular beam epitaxy (MBE) growth equipment designed for the production of high-quality, epitaxial layers. It is a multi-zone design with three independently heated zones covering Growth, Shadow, and Analyser ranges, and a fourth unheated zone for optical characterization. The system allows for the precisely controlled, layer-by-layer deposition of thin films suited for the production of compound semiconductor materials such as GaAs, InP, GaN, AlGaAs, InGaAs and others. AIX 2600 G3 HT's Growth Zone is its largest, reaching temperatures between 500 and 1000°C with independent temperature control in all three zones. The device's stabilized temperature reduces the number of inevitable temperature fluctuations throughout the growth cycle, facilitating the homogeneous, reproducible growth of free-standing ultra-thin layers. The Shadow Zone acts as an additional growth zone within the device and is often used as a buffer between the Analyser and Growth Zone, thereby preventing direct contamination from the Analyser Zone. The Analyser Zone composes of a high-resolution spectrograph, enabling the continuous, inline monitoring of growth parameters. This is done with the help of quartz crystal microbalance (QCM) and quartz crystal electrical balance (QEB) techniques. These measures allow for precise tuning of the growth parameters for the formation of a homogeneous, monocrystalline material on the substrates. In addition, AIXTRON AIX 2600 G3 HT features a powerful 4-channel optical view unit with additional close-up cameras, making the machine extremely user-friendly and enabling optimized optical characterizations at the highest possible resolution. It also leverages an EasyScan software package, which uses line scanning densitometry to quantitatively measure the thickness and composition of the layers being grown. All these features enabled by AIX 2600 G3 HT make it a highly versatile and powerful reactor for the manufacturing of advanced semiconductor materials and device structures. Its impeccable accuracy and reproducibility allows for thin-film layers of exceptional quality to be grown with the utmost efficiency.