Used AIXTRON 2000 #9222202 for sale

AIXTRON 2000 is a multi-chamber, rectangular, low-pressure metal organic chemical vapor deposition (MOCVD) reactor designed for thin-film deposition applications. This reactor allows researchers and engineers to precisely deposit compound semiconductor layers on various substrates. 2000 has three individual chambers; a host chamber, an exhaust chamber and an inert gas chamber. The host chamber contains the substrate material and allows the incoming precursor material to be broken down and atomized onto the substrate. The exhaust chamber is used to exhaust the reaction products from the process chamber, while the inert gas chamber prevents contamination from the environment. AIXTRON 2000 utilizes vertically-mounted hydride lamps to provide the energy for the chemical vapor deposition process. The lamps provide Ultraviolet (UV) energy in the range of 250-400 nm, which breaks down the incoming precursor material and enables the chemical reaction needed for thin-film deposition. The reactors' precision process control is achieved with an adjustable temperature range of 350-420°C. Flow rate of the process gases is regulated accurately with pressure control of 1-105 mbar and adjustable gas valve control. 2000's built-in safety features provide protection from process upsets, overpressure, and overheat. AIXTRON 2000's versatility is key to its success in the field. For example, 2000 is effective at depositing, etching, and cleaning a wide variety of compound semiconductor layers. It is also suitable for depositing diodes, thin-film transistors, LEDs, Schottky barriers, and other compound semiconductor devices. AIXTRON 2000 provides an environmentally friendly option with minimal waste production, low emission of volatiles, and no hazardous materials except for the precursor gas. Additionally, its rugged design and low required maintenance allow 2000 to operate reliably for extended periods of time. In conclusion, AIXTRON 2000 is a unique MOCVD reactor that combines robustness and precise process control to give scientists and engineers the ability to deposit a wide range of thin-film layers accurately and reliably. Its versatile operating parameters, environmental friendliness, and low maintenance make it an ideal choice for industrial compound semiconductor deposition.