Used AIXTRON 2400G3 HT #9254484 for sale

AIXTRON 2400G3 HT is a high-temperature 3-zone inductively coupled plasma reactor. It is designed for advanced deposition processes, such as the growth of Oxide, III-V compound and metallic thin films. This reactor has a unique three-zone arrangement, which makes it ideally suited for high-temperature processes. The three zones consist of: the source chamber, the crucible, and the plasma chamber. The source chamber is the first step in the process, where heated raw materials are placed in quartz crucibles and then introduced into the vacuum chamber. When the vacuum is created extremely high temperatures are then achieved in the chamber due to the absence of air. The temperature in the source chamber can reach up to 1800°C. Second is the crucible stage,which is located directly below the source chamber. Here, the material is inductively heated and molten. This molten material is then heated further in the plasma chamber. Here, the temperature can range from 750°C-2000°C depending on the material being used. The plasma chamber, is the third and final stage in the process. In it, the plasma is created via the introduction of a gas from an external source. The chamber also contains an inductor coil which is then used to further increase the temperature of the plasma. It also allows for the substrate material to be heated up and pre-cleaned to ensure it is ready to receive the deposited material. AIXTRON 2400 G3-HT reactor offers a number of advantages over other reactors. It is highly efficient, as it is able to achieve higher temperatures than other reactors, which in turn increases the deposition rate. It is also precise, as it is capable of depositing materials of very small thicknesses with high accuracy and uniformity. Furthermore, it is cost-effective, as it is faster than other reactors, which reduces material costs and labour costs. Overall, 2400 G3 HT is a versatile and reliable reactor with an extensive range of tools and capabilities. It is a perfect solution for a wide variety of deposition processes, as it is able to achieve extremely high temperatures at a faster rate than traditional reactors, and is precise enough to deposit thin films of material with high accuracy and uniformity.