Used AIXTRON 2800 G4 HT #9233664 for sale

AIXTRON 2800 G4 HT is a reactor designed specifically for high temperature deposition applications such as the production of oxides and nitrides, or the growth of nanomaterials. This state-of-the-art technology can be used for semiconductor deposition, oxide-based passivation, and oxide growth or crystallization. It works by delivering a precise, controlled dose of raw material into a closed vacuum chamber. The materials deposit on targets located in the chamber, one of two mechanisms for production. AIXTRON 2800G4 HT reactor has a unique construction based on several readily available components. The core components are the heating and cooling plates, the susceptor, the gas distribution system (GDS), and the collimator. The four-zone heatable susceptor is capable of heating up to 2500°C, and is designed to promote homogeneous temperatures across the sample area. The collimator design helps minimize contamination by optimizing the gas distribution and reducing any recombination of the precursor ions in the system. 2800 G4 HT utilizes the Remote Plasma Source technique, or RPS, for deposition. This process involves using ionized gases to create a plasma to deposit the material. This process is highly efficient, with very low particle generation, and gives users precise control over the deposition rate and film thickness. This reactor also uses a Closed Cycle Gas System to ensure no gases are lost or contaminated during the deposition process. In addition to the high deposition rates and precise process control that 2800G4 HT offers, this reactor also has exceptional gas-handling capabilities. The end user can choose from a wide selection of gases, ranging from Argon to Silicon Phosphide, for different stages or applications of the process. This allows users to maximize the efficiency of their processes, while minimizing waste and maximizing production. AIXTRON 2800 G4 HT is a highly effective and efficient reactor primarily designed for high temperature deposition processes. It offers reliable and precise control of the deposition rate and film thickness, has exceptional gas-handling capabilities, and works with a variety of gases. All of these features make this an ideal solution for any application that requires high-temperature deposition processes.