Used AIXTRON Crius 31x2" #9353181 for sale

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Manufacturer
AIXTRON
Model
Crius 31x2"
ID: 9353181
Vintage: 2008
MOCVD System 2008 vintage.
AIXTRON Crius 31x2 is a two-chamber Metalorganic Chemical Vapor Deposition (MOCVD) reactor designed for the production of semiconductor and photovoltaic materials. It is composed of two metalorganic CVD chambers, connected to a common base unit. The two CVD chambers are designed to facilitate the production of homogeneous thin films and the depositing of high-quality epitaxial layers. The first chamber, the process chamber is used as a production chamber for materials such as gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), gallium aluminum arsenide (GaAlAs), aluminum arsenide (AlAs), and indium phosphide (InP). Inside this chamber, processes such as homogeneous thin film deposition and higher-quality epitaxial layer deposition can be performed. A special feature of this chamber is the RF plasma source, which helps to control the growth rate and the stoichiometric purity of the film. The second chamber, the bake chamber is used to prepare the substrate for further processing. This chamber helps to reduce the surface oxide layer in the sample, allowing higher growth rates and improved material characteristics. The sample temperature during baking can be manipulated simply by changing the settings of the programmable temperature controller. Additionally, this chamber works in combination with a heated, filtered exhaust gas purge equipment to help minimize contamination in the chamber. A pre-heater is link to both of the CVD chambers which is responsible for raising the substrate temperature quickly to desired levels and evenly distributing the heat in both chambers. The pre-heater is connected to a programmable temperature controller so that the temperature can be accurately monitored and controlled. The base unit of AIXTRON Crius 31x2 contains the main power supply, the vacuum pumps, the gas mixing system, and the electronics. The vacuum pumps serve to pump out gas that reacts and forms deposits on both chambers. The gas mixing unit facilitates the addition of gases in the chamber for processing. The electronics control the whole machine and are responsible for both monitoring and controlling the process parameters like temperature, pressure, and the gas flow. AIXTRON Crius 31x2 offers a reliable, multi-chamber solution for the production of semiconductor and photovoltaic materials. It is equipped with the latest technology for quick and precise temperature manipulation, and provides a clean environment with the help of a heated and filtered exhaust gas purge tool. The integration of a pre-heater for quick and even transfer of heat ensures high-quality deposition of thin films and epitaxial layers.
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