Used AIXTRON Crius 31x2" #9353183 for sale

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Manufacturer
AIXTRON
Model
Crius 31x2"
ID: 9353183
Vintage: 2008
MOCVD System 2008 vintage.
AIXTRON Crius 31x2 reactor is a high-performance production equipment designed for crystalline, compound semiconductor and LED technologies. It is capable of delivering robust process control and uniform production results, as well as enabling growth of larger wafers with both p- and n-type dopants. The Crius 31x2 is ideal for SiGe and InGaN based power devices, large area substrates such as OLEDs and doping multi-epi layers. AIXTRON Crius 31x2 reactor is a single-wafer, non-conformal, magnetically-confined PECVD chamber. It combines RF plasma activation and an efficient high-frequency induction heating system in a single unit. The unit is capable of operating at up to 1000°C and delivering ultra-low thermal stress deposition, which is critical in enhancing epitaxial yield and crystallinity. The unit is also equipped with a machine for optical measurement capabilities to produce highly uniform device layers and to monitor chamber conditions for process optimization and control. The 31x2 utilizes 31 pre-defined standard recipes for various processes which are tailored to the specific applications. These recipes come pre-installed on the unit and can be adjusted to the user's specific process requirements. The unit is equipped with dual RF sources with the option of parallel, series or split radio frequency influence. This dynamic configuration allows for high-precision processing and uniformity across layers. The Crius 31x2 is a robust production-grade tool which can be used for applications such as power SiGe devices, LED and OLED wafers, and compound semiconductor films. Its integrated optimization capabilities make it an ideal choice for compound semiconductor manufacturing with uniform layers and minimum thermal stress. High throughput and process control enable rapid production of film layers with precise control while maximizing uptime.
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