Used AIXTRON Crius II #9272517 for sale

AIXTRON Crius II is an advanced epitaxial growth reactor designed for high-precision production of semiconductor wafers. Employing an innovative dual-source deposition approach, this equipment provides a highly accurate and reliable method for fabricating defect-free heterostructure devices. Crius II utilizes a hexagonal, three-zone chamber made up of an entrance source, growth zone, and substrate plane. The entrance source combines a high-efficiency gas flow system with an optimized substrate irradiation source. The gas flow unit is used to deliver a uniform supply of precursor molecules into the growth zone at a precise and controlled pressure. The substrate irradiation source ensures that all parts of the substrate are uniformly exposed to the compound contributions of incoming precursor molecules. The growth zone is equipped with a high-precision rotating wafer carrier which is heated to the desired growth temperature through a carefully engineered thermal liner. This temperature is then maintained throughout the process ensuring maximum homogeneity. The substrate is also kept at a constant temperature by using a dual-seal design. Combined, these two approaches uniformly stampotron the molecule's crystal composition, initiating epitaxial growth. AIXTRON Crius II also utilizes a state-of-the-art computer monitoring machine. This tool captures data from both the growth chamber and the control unit, giving users the ability to maintain a real-time overview of their production process. This data can be monitored for process parameter compliance and to alert operators in case of any process interruptions or breakdowns. Additionally, the data can be used to generate process reports and to track overall asset performance over time. By leveraging advanced process technologies, Crius II provides an exceptionally reliable and precise method for producing wafers with extremely low defects rates. This model has been widely adopted for a variety of applications, ranging from MEMS and optoelectronic components to new semiconductor devices.