Used AIXTRON Crius #9184894 for sale

AIXTRON Crius is a state-of-the-art molecular beam epitaxy (MBE) reactor designed for research and production applications in the semiconductor industry. It is a complete production solution offering an interface between MBE and other thin-film deposition/etching systems. Crius reactor consists of three main components: a growth chamber, an MBE source chamber, and a vacuum chamber. The growth chamber is the area in which the deposit or etch is formed. It contains several components, including a susceptor, a draw plate, wafer holders, and other components necessary for controlling the deposition or etching process. The MBE source chamber is where the gas that is to be used for the epitaxy process is delivered. The vacuum chamber is used to maintain a low-pressure atmosphere in the growth chamber. AIXTRON Crius reactor is capable of a wide range of process temperatures, from 167°C to 1000°C, and can accommodate substrates up to 200mm in diameter with a growing area of up to 25 mm2. Crius utilizes computerized controls to automate the process, allowing for precise program and parameter settings to be inputted and adjusted by the user. The growth environment is monitored and controlled by the system, with features such as an automatic shut down if temperature or pressure levels rise too high. AIXTRON Crius reactors utilize an indirect heating system, which is known to provide ternary, quaternary and higher source densities, allowing for the growth of complex materials on a single wafer. It also features a computerized loader, which allows thinner wafers to be loaded without touching the substrate or substrate holder. The reactor is equipped with safety features to prevent accidental exposure of personnel. Overall, Crius reactor is an ideal solution for research and production applications in the semiconductor industry, offering high-quality thin-film deposition and etching capabilities with an advanced level of automation and control.