Used AMAT / APPLIED MATERIALS ATX 700E #9061699 for sale
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ID: 9061699
Vintage: 2001
In-line sputter system
Work size: 5.5G, 1600x1200xt2.8mm
SiO2: <= 300A, RF Mag. Sputter
ITO: <= 2000A, DC Mag. Sputter
ITO patterning:
Display Glass
1,108 × 980mm
1,328 × 1,166mm
1,460 × 1,030mm
1,620 × 1,200mmt
1.5 ~ 2.8mm
Running 2003 to 2007.
ITO sputtering:
Display Glass
Max.: 1600 × 1200 × t2.8mm
Running 2001 to 2006
Cleaning equipment:
Display Glass
The flow roller conveyors flat sheet-fed, pure water substitution, air knife draining
Cleaning effective width 1,200mm, normal speed 1.2m / min) the wash water scrubbing
Running 2001 to 2006
Cut chamfer 1:
Display Glass
Target substrate size: 1620 × 1210 ~ 1050 × 650
Target substrate thickness: 1.8 ~ 2.8
Setsu-men-Komei cleaning and inspection
Running 2001 to 2012
Cut chamfer 2:
Display Glass
Target substrate size: 1220 × 1050 ~ 840 × 550
Target substrate thickness: 1.8 ~ 2.8t
Setsu-men-Komei cleaning and inspection
Running 2001 to 2009
Cut chamfer 3:
Display Glass
Target substrate size: 1800 × 1210 ~ 950 × 550
Target substrate thickness: 1.8 ~ 2.8t
Setsu-men-Komei cleaning and inspection
Running 2003 to 2012
2001 vintage.
AMAT / APPLIED MATERIALS / AKT ATX 700E is a versatile sputtering equipment designed to provide a wide range of film deposition applications. Featuring a unique dual source design, this system allows simultaneous growth of two different target materials. It utilizes a sputtering process that deposits thin-film metal, alloy, ceramic, and dielectric layers with controlled composition over large substrates. AKT ATX 700E is capable of processing wafers up to 200mm in size. The unit consists of two primary components - a process module with the target, source and plasma generator, and a mechanical module. The process module is where the source and target materials are applied to the wafer. The sources and target are precisely spaced for the optimum source-to-substrate spacing and provide uniform, high-quality films. In addition, a plasma generator is used to provide a high-temperature, high-pressure energized gaseous environment for film deposition. The mechanical module includes the vacuum chamber, gas delivery machine, plasma generator, temperature control tool, and a variety of component-handling systems. The vacuum chamber is where the wafers are processed in a vacuum environment. The gas delivery asset controls the gas flow rates and chemical composition to achieve precise control of the film characteristics. The temperature control model ensures that films are formed consistently over both substrate and target materials. Finally, the component-handling equipment manages the loading, transport and unloading of wafers from the system. AMAT ATX 700E is equipped with a wide range of process controls and monitoring features. A user-friendly control unit allows adjustment of parameters such as pressure, temperature, gas flow, source-to-substrate spacing and target-to-source configuration. Multiple safety features are also included, such as a dual power-failure protection machine which monitors both temperature and pressure in the vacuum chamber. Overall, APPLIED MATERIALS ATX 700E provides a versatile and reliable solution for thin-film deposition applications. It is suitable for a wide range of research, development, and production applications, covering a variety of materials and substrate sizes. The tool's dual-source design allows for efficient and uniform film deposition at lower cost, while its advanced process-controls and monitoring features provide for precise control and reliable performance.
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