Used CANON / ANELVA ILC 1060 #9175336 for sale

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ID: 9175336
PVD Sputtering system, 5" Process: SiO2 Chambers: (3) SP Etch Heat L1-Chamber configuration: Process: Etch Exhaust pump: TG-550 Power unit model: VMA-1 1kW (RF) Shield: φ5 Standard Holder type: Upthrust pin Process gas / Ar: 100sccm Baratron: 690A01TRC Gate valve No MV lock method No shutter method No shield temperature control No Q-UHV No analyzer tube L2-Chamber configuration: Process: Wsi Exhaust pump: Torr8 Power unit model: PDC-157E 15kW (DC) Cathode Mg: Wsi8/6-1 Shield: Top / Bottom exhaust SP Chuck type: 99% Ring chuck Holder type: Top / Bottom clutch Heating temperature: 400°C Heating type: Ceramic heater Heating method: Gas heating Process gas / Ar: 100sccm Baratron: 690A01TRC Gate valve No MV lock method No shutter method No shield temperature control No Q-UHV No analyzer tube C-Chamber configuration: Process: Ti Exhaust pump: Torr8 Power unit model: PDC-157E 15kW (DC) Cathode Mg: Ti8-1 Shield: Top / Bottom exhaust SP Chuck type: 99% Ring chuck Holder type: Top / Bottom clutch Heating temperature: 400°C Heating type: Ceramic heater Heating method: Gas heating Process gas / Ar: 100 sccm Baratron: 690A01TRC Gate valve No MV Lock method No shutter method No shield temperature control No Q-UHV No analyzer tube R2-Chamber configuration: Process: TiN Exhaust pump: Torr8 Power unit model: PDC-157E 15kW (DC) Cathode Mg: TiN8-1 Shield: Top / Bottom exhaust SP Chuck type: 99% Ring chuck Holder type: Upthrust pin Heating temperature: 400°C Heating type: Ceramic heater Heating method: Gas heating Process gas / Ar: 100 sccm Process gas / N2: 100 sccm Baratron: 690A01TRC Gate valve No MV Lock method No shutter method No shield temperature control No Q-UHV No analyzer tube R1-Chamber configuration: Holder type: Top / Bottom clutch Heating temperature: 400°C Heating type: Lamp heater Heating method: Radiation heating Cables missing 1994 vintage.
CANON / ANELVA ILC 1060 is a sputtering equipment that utilizes a highly-controlled and efficient sputtering technique. This system allows for the deposition of thin films on a variety of substrates and has been widely used in the semiconductor, optical, and biomedical industries. CANON ILC 1060 consists of a main chamber, two transfer chambers, a pre-sputter chamber, and a thermal sputter chamber. The main chamber is where most sputtering takes place and is equipped with a diode magnetron and a sputter cathode target. The diode magnetron allows for the sputter gas to be ionized and the target can be either rotated or oscillated to achieve uniform deposition. Vacuum is maintained in the chamber and controlled with an integrated turbomolecular pumping unit. The transfer chamber contains two sources of plasma, KF and KHM, as well as a load lock, to provide controlled transfer of substrates from the main chamber. Meanwhile, the pre-sputter chamber is used to break surface contaminants before the sample enters into the main chamber. Finally, the thermal sputter chamber is used to evaporate materials, by application of a radio-frequency plasma source. ANELVA ILC-1060 is powered by a Digital Signal Processing Unit or DSP Unit, which generates plasma as well as produces a range of support systems needed for sputter processing. The DSP unit is responsible for controlling the sputter pressure, chamber temperature and gas composition. Additionally, the DSP unit provides a range of safety functions such as overheat protection, overcurrent protection, and magnetic field protection. In order to operate ILC 1060, a variety of parameters must be set. The user needs to specify the substrate temperature, sputter power, sputter pressure, sputter time, frequency, and target. Additionally, the machine is has the ability to be automatically programmed with preset parameters. Given its numerous features, CANON / ANELVA ILC-1060 is a powerful and efficient sputtering tool. It is capable of depositing thin films on a variety of substrates, while also providing users with flexibility and control. As such, it is an ideal choice for those looking to take advantage of sputter processing for their particular applications.
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