Used MAGNETRON Sputtering #194492 for sale

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ID: 194492
Wafer Size: 4"-6"
Vintage: 2010
Sputtering system, 4"-6" In‐line 3‐target system Process variables can be monitored via ZR-RX40 (2) PSICM DC Sputter power supplies ATOVAC GVC2200 Vacuum gauge controller and gauges MKS 600 Series pressure controller NOVA series ST580 Digital temperature KODIVAC 340 Rotary pump Main system: (2) Chambers: Sample chamber Main chamber Chamber size: Main chamber: 3.5"x ~7" Sample chamber: 2.5" x 3.5" Control rack: 2" x 3" Roughing pump: 2" x 2" Sputter chamber: ~7" wide and 1.5" height Carrier slider: 1" Length Al plate Gate valve chamber: 1.5" Length Sputter gun section: (3) Guns Lamp heater Sputter target size: 300 mm x 100 mm Installed target: Mo, Cu-Ga, In Isolation gate valve: 1 for sample, 1 for vacuum Transport: Automatic motor driven Vacuum system: KODIVAC 1600K Rotary pump GENESIS ICP 250L Cryo pump Automatic vacuum / Process control with LED display Vacuum sensor / Control: ATOVAC GVC22005 Sputter system: Sputter power supply: (2) 2 kW PSTEK DC Power supplies (4) Gas flow controls: SEAHWA KRO-4000 KOFLOC 3665 SEC 7440 Substrate motion control: LED Panel display with speed controller Manuals included 2010 vintage.
MAGNETRON Sputtering is an advanced, cutting edge technology used to deposit thin films consisting of a variety of materials. It works by utilizing an electric field to create high-energy positive ions of a plasma into a target material. The ions are accelerated to a high velocity and impact the target material, which causes atoms of the target material to be released from the surface. These atoms are then transferred to a substrate that is placed on the other side of the vacuum chamber. This transfer process allows for a thin film to be deposited at a uniform thickness with excellent smoothness and good adhesion to the substrate. The advantage of Sputtering is that the electric field is directed in a specific direction and can prevent ions other than those from the target being sputtered onto the substrate. The effect of this is that the thin film produced is clean and free from contamination. It can also produce films of a much higher density than can be achieved with other deposition techniques. Another advantage of this technology is that it is very efficient and is able to deposit thin films with very low energy consumption. This is due to the electric field used as it can be directed in a way to use the least amount of energy to create the plasma that is needed. Finally, the fact that MAGNETRON Sputtering is a physical process it results in fewer contaminants as compared to chemical vapor deposition. The process of Sputtering is divided into three main stages. Firstly, a vacuum environment must be created in the sputter chamber and the sputter target is placed inside the chamber. Secondly, a negative electric potential is applied to the sputter target and a high power radio frequency (RF) generator is used to induce a high temperature plasma within the chamber. Lastly, the RF generator is used to control the rate at which the atoms released from the target material are deposited onto the substrate. The amount of deposition required can be adjusted by varying the bias voltage and the RF power. The energy of the ions produced can also be varied by changing the voltage of the sputter gun, which is an important feature when controlling where the atoms of the target material are deposited. In conclusion, MAGNETRON Sputtering is a powerful and versatile technique that can be used to deposit thin films of a range of different materials with a very high degree of accuracy. It is a very efficient and economical process with minimal waste and is capable of producing excellent adhesion and smooth surfaces for thin films.
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