Used MAGNETRON Sputtering #194492 for sale
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ID: 194492
Wafer Size: 4"-6"
Vintage: 2010
Sputtering system, 4"-6"
In‐line 3‐target system
Process variables can be monitored via ZR-RX40
(2) PSICM DC Sputter power supplies
ATOVAC GVC2200 Vacuum gauge controller and gauges
MKS 600 Series pressure controller
NOVA series ST580 Digital temperature
KODIVAC 340 Rotary pump
Main system:
(2) Chambers:
Sample chamber
Main chamber
Chamber size:
Main chamber: 3.5"x ~7"
Sample chamber: 2.5" x 3.5"
Control rack: 2" x 3"
Roughing pump: 2" x 2"
Sputter chamber: ~7" wide and 1.5" height
Carrier slider: 1" Length Al plate
Gate valve chamber: 1.5" Length
Sputter gun section: (3) Guns
Lamp heater
Sputter target size: 300 mm x 100 mm
Installed target: Mo, Cu-Ga, In
Isolation gate valve: 1 for sample, 1 for vacuum
Transport: Automatic motor driven
Vacuum system:
KODIVAC 1600K Rotary pump
GENESIS ICP 250L Cryo pump
Automatic vacuum / Process control with LED display
Vacuum sensor / Control: ATOVAC GVC22005
Sputter system:
Sputter power supply: (2) 2 kW PSTEK DC Power supplies
(4) Gas flow controls:
SEAHWA KRO-4000
KOFLOC 3665
SEC 7440
Substrate motion control:
LED Panel display with speed controller
Manuals included
2010 vintage.
MAGNETRON Sputtering is an advanced, cutting edge technology used to deposit thin films consisting of a variety of materials. It works by utilizing an electric field to create high-energy positive ions of a plasma into a target material. The ions are accelerated to a high velocity and impact the target material, which causes atoms of the target material to be released from the surface. These atoms are then transferred to a substrate that is placed on the other side of the vacuum chamber. This transfer process allows for a thin film to be deposited at a uniform thickness with excellent smoothness and good adhesion to the substrate. The advantage of Sputtering is that the electric field is directed in a specific direction and can prevent ions other than those from the target being sputtered onto the substrate. The effect of this is that the thin film produced is clean and free from contamination. It can also produce films of a much higher density than can be achieved with other deposition techniques. Another advantage of this technology is that it is very efficient and is able to deposit thin films with very low energy consumption. This is due to the electric field used as it can be directed in a way to use the least amount of energy to create the plasma that is needed. Finally, the fact that MAGNETRON Sputtering is a physical process it results in fewer contaminants as compared to chemical vapor deposition. The process of Sputtering is divided into three main stages. Firstly, a vacuum environment must be created in the sputter chamber and the sputter target is placed inside the chamber. Secondly, a negative electric potential is applied to the sputter target and a high power radio frequency (RF) generator is used to induce a high temperature plasma within the chamber. Lastly, the RF generator is used to control the rate at which the atoms released from the target material are deposited onto the substrate. The amount of deposition required can be adjusted by varying the bias voltage and the RF power. The energy of the ions produced can also be varied by changing the voltage of the sputter gun, which is an important feature when controlling where the atoms of the target material are deposited. In conclusion, MAGNETRON Sputtering is a powerful and versatile technique that can be used to deposit thin films of a range of different materials with a very high degree of accuracy. It is a very efficient and economical process with minimal waste and is capable of producing excellent adhesion and smooth surfaces for thin films.
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