Used VARIAN / TEL / TOKYO ELECTRON MB2-730 HT #77413 for sale
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ID: 77413
CVD system, 3 chamber WSi CVD, 8"
Turned off and de-installed late 2007
Maintenance by: TEL
Secs/gem: yes
CE Mark: yes
SW Version UI V4.8HL
In elect rack: 3x Ebara TMP controller (306W), labelled for PM RH TMP, PM LH TMP, T-M TMP; CVD Utility controller
Main Frame MBB730 (3 chambers)
Maintenance Table
UI-Rack
Additional breaker box
MBB-730 Main Power Distribution
Power Rack
Edwards D150 dual GRC, qty 3 , Edwards PN A55222110, 208v 3 PHASE Weigt: 380 KG
Chiller TEL: 3
Box with cable/Process kit/manuals
Gases:
N2 (ox) 4 l/min
N2 (red) 125 l/min
Ar 1500 sccm
WF6 15 sccm
ClF3 1500 sccm
DCS 1500 sccm
1996 vintage.
TEL MB2-730 High-Throughput Sputtering Equipment is a sputtering system designed for manufacturing and research applications. This unit is ideal for nano-scale deposition and provides a superior level of process control, performance, and reliability. It features a dual-magnetron RF sputter source, as well as an advanced multi-faceted ionization and DC sputter targets that are capable of producing high quality, uniform thin films. The machine also has an integrated high-vacuum chamber that is capable of achieving an ultra-high vacuum level for high purity film deposition. The tool offers a number of excellent features that make it ideal for a range of industrial and academic applications. It has a rapid-response control suite which enables the asset to operate at or near the peak of its process performance during the operation cycle. This reduces the need for recalibration and saves time during production. The model also has multiple configuration options to allow for various types of film deposition, as well as different sputter target materials. The MB2-730 High-Throughput sputtering equipment is also designed with advanced power management features. This system features a low-noise power supply that is optimized for optimal levels of efficiency, providing superior power delivery and minimized power consumption. The power supply is compatible with both DC and RF sputter sources, and offers a range of output levels to suit various target materials and substrate sizes. In addition, the unit has an ion source which helps to extend the thickness of the deposited film by providing a higher concentration of ions during the deposition process. This reduces the need for multiple deposition cycles, resulting in shorter production runs and lower production costs. Moreover, it allows for easier and more precise control over the sputtering process, resulting in consistent film thicknesses and uniformity. Finally, the MB2-730 High-Throughput sputtering machine is built with advanced safety features to ensure safe operation of the tool in both industrial and academic settings. Safety features include a sealable chamber that can be used to isolate the RF and DC high-power sources, preventing personnel from entering the active area during operation. Additionally, the asset has a real-time safety model that monitors thermal, mechanical, and electrical conditions of the equipment and any sample materials, ensuring safe and accurate operation for each job.
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