Used NIKON NSR SF120 #9227511 for sale
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ID: 9227511
Wafer Size: 12"
Vintage: 2003
i-Line stepper, 8"-12"
Inline with ACT 12
Magnification: 1/4 Reduction
Light source: i-Line (365 nm)
Resolution: 0.28 µm
Variable lens NA: 0.50~0.62
Exposure filed size: 25-33 mm
Lens adjust: PIEZO (3-Axis)
PC Hardware:
DS10 Type
UPS
Reticle size: 6"
SIMF
Variable reticle microscope
Alignment sensor:
LSA
FIA
AIS
Interferometer system:
Wafer stage
Reticle stage
Multi focus system
Table leveling (VCM)
Wafer loader:
Type3
Notch
Wafer cassette
Front In-line (FOUP) + ACT 12
NC PRE2
Reticle loader:
SMIF Type (OHT)
(2) Indexers
Barcode reader
Particle checker (PPD3)
Control rack:
Right type
Normal cable length
Chamber:
Sendai chamber S52
CVCF NEMA
Electrical power: 208 V, 60 Hz, 3-Phase
BATC / CATC / LLTC: 23°
Options:
Front In-line FOUP
TRANS Power unit
Lamp cooling unit
illumination system:
ID1(L-NA/I-NA): (Con V 0.52/0.36)
ID2(L-NA/I-NA): (ANN 0.62/0.5)
ID3(L-NA/I-NA): (Con V 0.62/0.43)
ID4(L-NA/I-NA): (Con V 0.62/0.36)
Wafer flatness:
Maximum-Minimum: 1.580 µm
L.F Maximum: 0.440 µm
Lamp uniformity:
Power: 1224.687 mw/cm²
Uniformity: 0.780%
Lens distortion:
Minimum - maximum:
X: -0.012 - 0.013 µm
Y: -0.017 - 0.016 µm
Lens inclination:
Maximum-minimum: 0.124 µm
Curvature: 0.041 µm
AST(V-H): 0.051 µm
UR-LL: 0.026 µm
UL-LR: 0.002 µm
Illumination power source: 5.0 kW Mercury ARC lamp
2003 vintage.
NIKON NSR SF120 is a high-performance wafer stepper designed for advanced lithography processes. It combines the benefits of a large-aperture lens equipment with the high photoelement resolution of a full-field stepper. This combination enables NIKON NSR-SF120 to provide high precision imaging and maximum wafer throughput, while maintaining excellent reproducibility even at the nanometer level. The system is equipped with an advanced control unit which includes a powerful scan-power optimization for minimizing process variations. Its software controlled optical alignment enables accurate placement of the pattern on wafer surface, which reduces pattern transfer errors. With superior alignment accuracy, feature size and overlay stability can be maintained within sub-micron levels. NSR SF 120 utilizes a full-field imaging machine which enables higher image throughput compared to the single step tool. It utilizes high-resolution optics with an aperture of 0.75X, and a field size of 10.8mm, which allows for patterns of up to 7nm of critical dimension (CD). Additionally, the asset can accommodate masks ranging from 5" to 16". The model offers an excellent performance in terms of repeatability and exposure stability, thanks to its advanced control equipment. It also offers excellent staging precision that enables higher production yields and maximizes yield. Features of NSR SF120 include an intuitive console GUI for manual or remote operation, an integrated scan and shape measurement system, a high speed interface for fast image transfer, an auto-centering feature for improved k1 uniformity, and a memory unit for reducing data overhead. To ensure high-quality lithography, the machine is designed with a dual-dwell tool for direct illuminator control. This asset can deliver split exposure using center-zone illumination with a fixed scan pattern and variable pattern shifting. NIKON SF120 offers a high-performance solution for advanced lithography processes where the accuracy of imaging and precision of patterns are critical. Its superior optical model, combined with its excellent control equipment and fast data transfer, enables greater throughput, yield and repeatability. Its high resolution optics and excellent pattern formation accuracy provide the necessary tools for successful lithography applications.
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