Molecular Beam Epitaxy

OXFORD VG V80 MBE System, 2” or 3” Capable of using one 2", or one 3", high substrate temperature up to 1100°C Used for As, Sb, Al, Ga, In, Si, Be, GaTe, GaAs and GaSb substrates System can be used for GaN Growth chamber Buffer chamber storage/degas Load Lock chamber loading/unloading/degas Pre-chamber Maximum substrate TC temperature is 1100°C Leak detector Sample prepare bench Solid State Sources Layout: (1) Gallium (1) Aluminum (1) Arsenic valved cracker (1) Antimony valved cracker (1) Indium (1) Silicon (1) Be dopant (1) GaTe dopant Growth chamber: UHV ultra high vacuum chamber Pyrometer RHEED gun RGA Includes: (1) CT8 Cryo pumps with compressors and one spare one (2) Ion pumps (1) Turbo pump (1) Dry scroll roughing pump (1) Wafer Holder (1) IV Arsenic valved cracker (1) IV Antimony valved cracker (1) 50g Gallium cells (1) 50g Aluminum cells (1) 25g DWL SUMO Indium cells (1) DC power supplies per cell (3) 5cc Dopant cells for Si and Be and GaTe, includes (1) DC power supply per cell (1) CTI CT8 cryopumps with 8200 compressors for growth chamber (2) Ion pumps for buffer and exit chambers (1) Turbo/dry scroll pump set for intro chamber (1) RGA (1) RHEED System (1) Pyrometer (1) Leak detector (1) Bake out panels (1) Sample prepare bench Currently installed.

OXFORD VG V80 MBE System, 2” or 3” Capable of using one 2", or one 3", high substrate temperature up to 1100°C Used for As, Sb, Al, Ga, In, Si, Be, GaTe, GaAs and GaSb substrates System can be used for GaN Growth chamber Buffer chamber storage/degas Load Lock chamber loading/unloading/degas Pre-chamber Maximum substrate TC temperature is 1100°C Leak detector Sample prepare bench Solid State Sources Layout: (1) Gallium (1) Aluminum (1) Arsenic valved cracker (1) Antimony valved cracker (1) Indium (1) Silicon (1) Be dopant (1) GaTe dopant Growth chamber: UHV ultra high vacuum chamber Pyrometer RHEED gun RGA Includes: (1) CT8 Cryo pumps with compressors and one spare one (2) Ion pumps (1) Turbo pump (1) Dry scroll roughing pump (1) Wafer Holder (1) IV Arsenic valved cracker (1) IV Antimony valved cracker (1) 50g Gallium cells (1) 50g Aluminum cells (1) 25g DWL SUMO Indium cells (1) DC power supplies per cell (3) 5cc Dopant cells for Si and Be and GaTe, includes (1) DC power supply per cell (1) CTI CT8 cryopumps with 8200 compressors for growth chamber (2) Ion pumps for buffer and exit chambers (1) Turbo/dry scroll pump set for intro chamber (1) RGA (1) RHEED System (1) Pyrometer (1) Leak detector (1) Bake out panels (1) Sample prepare bench Currently installed.

OXFORD VG V80 MBE System, 2” or 3” Capable of using one 2", or one 3", high substrate temperature up to 1100°C Used for As, Sb, Al, Ga, In, Si, Be, GaTe, GaAs and GaSb substrates System can be used for GaN Growth chamber Buffer chamber storage/degas Load Lock chamber loading/unloading/degas Pre-chamber Maximum substrate TC temperature is 1100°C Leak detector Sample prepare bench Solid State Sources Layout: (1) Gallium (1) Aluminum (1) Arsenic valved cracker (1) Antimony valved cracker (1) Indium (1) Silicon (1) Be dopant (1) GaTe dopant Growth chamber: UHV ultra high vacuum chamber Pyrometer RHEED gun RGA Includes: (1) CT8 Cryo pumps with compressors and one spare one (2) Ion pumps (1) Turbo pump (1) Dry scroll roughing pump (1) Wafer Holder (1) IV Arsenic valved cracker (1) IV Antimony valved cracker (1) 50g Gallium cells (1) 50g Aluminum cells (1) 25g DWL SUMO Indium cells (1) DC power supplies per cell (3) 5cc Dopant cells for Si and Be and GaTe, includes (1) DC power supply per cell (1) CTI CT8 cryopumps with 8200 compressors for growth chamber (2) Ion pumps for buffer and exit chambers (1) Turbo/dry scroll pump set for intro chamber (1) RGA (1) RHEED System (1) Pyrometer (1) Leak detector (1) Bake out panels (1) Sample prepare bench Currently installed.

OXFORD VG V80 MBE System, 2” or 3” Capable of using one 2", or one 3", high substrate temperature up to 1100°C Used for As, Sb, Al, Ga, In, Si, Be, GaTe, GaAs and GaSb substrates System can be used for GaN Growth chamber Buffer chamber storage/degas Load Lock chamber loading/unloading/degas Pre-chamber Maximum substrate TC temperature is 1100°C Leak detector Sample prepare bench Solid State Sources Layout: (1) Gallium (1) Aluminum (1) Arsenic valved cracker (1) Antimony valved cracker (1) Indium (1) Silicon (1) Be dopant (1) GaTe dopant Growth chamber: UHV ultra high vacuum chamber Pyrometer RHEED gun RGA Includes: (1) CT8 Cryo pumps with compressors and one spare one (2) Ion pumps (1) Turbo pump (1) Dry scroll roughing pump (1) Wafer Holder (1) IV Arsenic valved cracker (1) IV Antimony valved cracker (1) 50g Gallium cells (1) 50g Aluminum cells (1) 25g DWL SUMO Indium cells (1) DC power supplies per cell (3) 5cc Dopant cells for Si and Be and GaTe, includes (1) DC power supply per cell (1) CTI CT8 cryopumps with 8200 compressors for growth chamber (2) Ion pumps for buffer and exit chambers (1) Turbo/dry scroll pump set for intro chamber (1) RGA (1) RHEED System (1) Pyrometer (1) Leak detector (1) Bake out panels (1) Sample prepare bench Currently installed.

OXFORD VG V80 MBE System, 2” or 3” Capable of using one 2", or one 3", high substrate temperature up to 1100°C Used for As, Sb, Al, Ga, In, Si, Be, GaTe, GaAs and GaSb substrates System can be used for GaN Growth chamber Buffer chamber storage/degas Load Lock chamber loading/unloading/degas Pre-chamber Maximum substrate TC temperature is 1100°C Leak detector Sample prepare bench Solid State Sources Layout: (1) Gallium (1) Aluminum (1) Arsenic valved cracker (1) Antimony valved cracker (1) Indium (1) Silicon (1) Be dopant (1) GaTe dopant Growth chamber: UHV ultra high vacuum chamber Pyrometer RHEED gun RGA Includes: (1) CT8 Cryo pumps with compressors and one spare one (2) Ion pumps (1) Turbo pump (1) Dry scroll roughing pump (1) Wafer Holder (1) IV Arsenic valved cracker (1) IV Antimony valved cracker (1) 50g Gallium cells (1) 50g Aluminum cells (1) 25g DWL SUMO Indium cells (1) DC power supplies per cell (3) 5cc Dopant cells for Si and Be and GaTe, includes (1) DC power supply per cell (1) CTI CT8 cryopumps with 8200 compressors for growth chamber (2) Ion pumps for buffer and exit chambers (1) Turbo/dry scroll pump set for intro chamber (1) RGA (1) RHEED System (1) Pyrometer (1) Leak detector (1) Bake out panels (1) Sample prepare bench Currently installed.

OXFORD / VG SEMICON V100 3-Stage Molecular Beam Epitaxy (MBE) System Currently configured for 5x3" wafers Other capabilities : 1x6", 3x4", 5x3" or 12x2" substrate wafers at a time CBr4 Source Deposition chamber Preparation chamber with (2) fast entry locks Outgas stage System bench Control rack Computers Custom control software or OEM Control Rack Modules UHV Pressure Controllers Shutter Controls Valve Controls Transfer Controls, Pumpdown / Vent Controls RHEED Gun Supply RGA and temperature monitoring 4- Loop Thyristors UPS Interface Multi-Gauge, Autoranging Picoammeters (1) SRS RGA200 Quadruple Mass Spectrometer (1) Applied Epi RF Plasma Source Tuning Unit (3) Powerware Prestige EXT UPS Supplies (1) Neslab CFT-150 Recirculator (1) CTI 9600 Compressor (3) Busch Diaphragm Pumps (4) Heavy-Duty Transformers Liquid Nitrogen System Components Continuous power supply battery back up LN2 phase separator Controllers Pumps Manuals 415V, 50/60Hz.

OXFORD / VG SEMICON V100 3-Stage Molecular Beam Epitaxy System Currently configured for 5x3" wafers Other capabilities : 1x6", 3x4", 5x3" or 12x2" substrate wafers at a time CBr4 Source Deposition chamber Preparation chamber with (2) fast entry locks Outgas stage System bench Control rack Computers Custom control software or OEM Control Rack Modules UHV Pressure Controllers Shutter Controls Valve Controls Transfer Controls, Pumpdown / Vent Controls RHEED Gun Supply RGA and temperature monitoring 4- Loop Thyristors UPS Interface Multi-Gauge, Autoranging Picoammeters (1) SRS RGA200 Quadruple Mass Spectrometer (1) Applied Epi RF Plasma Source Tuning Unit (3) Powerware Prestige EXT UPS Supplies (1) Neslab CFT-150 Recirculator (1) CTI 9600 Compressor (3) Busch Diaphragm Pumps (4) Heavy-Duty Transformers Liquid Nitrogen System Components Continuous power supply battery back up LN2 phase separator Controllers Pumps Manuals 415V, 50/60Hz.

OXFORD / VG SEMICON V90 MBE system NH3 line Contamination: GaN particles Electrical issues Some valves are nonfunctional Standard V90 chamber, initially designed for GSMBE (6) Cell ports with diameter CF100 and individual cell shutters (presently used for Ga, Al, In and Si cells) (1) Central port with diameter CF100 (presently used for a NH3 injector + reflectometry port) Substrate heater for 3" x 2" or 1" x 4" Heater modified by Addon to reach 1100°C for oxide removing from Si substrate Rheed port with Canon Rheed gun and screen Pyrometer port (without pyrometer), flux gauge, chamber pressure gauge, VG mass spectrometer Loading chamber for up multiple platen Preparation chamber with ion pump No automatic transfer No outgas stage, dedicated port is available, 1 FEL Facilities: (2) Low pressure regulation boards from VG (NH3 + N2) (2) High pressure regulation boards (NH3 + N2) NH3 board and bottle are in a closed rack Primary pump Edwards Drystar (needs repair) NH3 exhaust gas abatement system from CS CLEAN SYSTEMS Heating shields for whole machine out-gassing Cells: Double filament cells for Ga and In Cold lip cells for Al, Si doping cell NH3 injector with integrated shutter Nitrogen plasma cell from Addon Deinstalled Currently stored in cleanroom 1990 vintage.

OXFORD / VG SEMICON V100 MBE Growth System, 3" (5) 3" wafers CBr4 source Custom control software or OEM, both still supported in In-situ RHEED, RGA and temp monitoring Continuous power supply battery back-up LN2 phase separator.

OXFORD / VG SEMICON V100 3-Stage Molecular Beam Epitaxy System Currently configured for 5x3" wafers Other capabilities : 1x6", 3x4", 5x3" or 12x2" substrate wafers at a time CBr4 Source Deposition chamber Preparation chamber with (2) fast entry locks Outgas stage System bench Control rack Computers Custom control software or OEM Control Rack Modules UHV Pressure Controllers Shutter Controls Valve Controls Transfer Controls, Pumpdown / Vent Controls RHEED Gun Supply RGA and temperature monitoring 4- Loop Thyristors UPS Interface Multi-Gauge, Autoranging Picoammeters (1) SRS RGA200 Quadruple Mass Spectrometer (1) Applied Epi RF Plasma Source Tuning Unit (3) Powerware Prestige EXT UPS Supplies (1) Neslab CFT-150 Recirculator (1) CTI 9600 Compressor (3) Busch Diaphragm Pumps (4) Heavy-Duty Transformers Liquid Nitrogen System Components Continuous power supply battery back up LN2 phase separator Controllers Pumps Manuals 415V, 50/60Hz.

OXFORD / VG SEMICON V100 3-Stage Molecular Beam Epitaxy (MBE) System Currently configured for 5x3" wafers Other capabilities : 1x6", 3x4", 5x3" or 12x2" substrate wafers at a time CBr4 Source Deposition chamber Preparation chamber with (2) fast entry locks Outgas stage System bench Control rack Computers Custom control software or OEM Control Rack Modules UHV Pressure Controllers Shutter Controls Valve Controls Transfer Controls, Pumpdown / Vent Controls RHEED Gun Supply RGA and temperature monitoring 4- Loop Thyristors UPS Interface Multi-Gauge, Autoranging Picoammeters (1) SRS RGA200 Quadruple Mass Spectrometer (1) Applied Epi RF Plasma Source Tuning Unit (3) Powerware Prestige EXT UPS Supplies (1) Neslab CFT-150 Recirculator (1) CTI 9600 Compressor (3) Busch Diaphragm Pumps (4) Heavy-Duty Transformers Liquid Nitrogen System Components Continuous power supply battery back up LN2 phase separator Controllers Pumps Manuals 415V, 50/60Hz.

OXFORD / VG SEMICON: V90 MBE system NH3 line Contamination: GaN particles Electrical issues Some valves are nonfunctional Standard V90 chamber, initially designed for GSMBE (6) Cell ports with diameter CF100 and individual cell shutters (presently used for Ga, Al, In and Si cells) (1) Central port with diameter CF100 (presently used for a NH3 injector + reflectometry port) Substrate heater for 3" x 2" or 1" x 4" Heater modified by Addon to reach 1100°C for oxide removing from Si substrate Rheed port with Canon Rheed gun and screen Pyrometer port (without pyrometer), flux gauge, chamber pressure gauge, VG mass spectrometer Loading chamber for up multiple platen Preparation chamber with ion pump No automatic transfer No outgas stage, dedicated port is available, 1 FEL Facilities: (2) Low pressure regulation boards from VG (NH3 + N2) (2) High pressure regulation boards (NH3 + N2) NH3 board and bottle are in a closed rack Primary pump Edwards Drystar (needs repair) NH3 exhaust gas abatement system from CS CLEAN SYSTEMS Heating shields for whole machine out-gassing Cells: Double filament cells for Ga and In Cold lip cells for Al, Si doping cell NH3 injector with integrated shutter Nitrogen plasma cell from Addon Stored in a cleanroom, covered in plastic 1990 vintage.

OXFORD / VG SEMICON V150 MBE Reactor Primarily used for Group III-V pHEMT growth Epi material: arsenic, gallium, indium, aluminum, phosphorous and silicon 2003 vintage.

OXFORD / VG SEMICON V100 3-Stage Molecular Beam Epitaxy System Currently configured for 5x3" wafers Other capabilities : 1x6", 3x4", 5x3" or 12x2" substrate wafers at a time CBr4 Source Deposition chamber Preparation chamber with (2) fast entry locks Outgas stage System bench Control rack Computers Custom control software or OEM Control Rack Modules UHV Pressure Controllers Shutter Controls Valve Controls Transfer Controls, Pumpdown / Vent Controls RHEED Gun Supply RGA and temperature monitoring 4- Loop Thyristors UPS Interface Multi-Gauge, Autoranging Picoammeters (1) SRS RGA200 Quadruple Mass Spectrometer (1) Applied Epi RF Plasma Source Tuning Unit (3) Powerware Prestige EXT UPS Supplies (1) Neslab CFT-150 Recirculator (1) CTI 9600 Compressor (3) Busch Diaphragm Pumps (4) Heavy-Duty Transformers Liquid Nitrogen System Components Continuous power supply battery back up LN2 phase separator Controllers Pumps Manuals 415V, 50/60Hz.

OXFORD / VG SEMICON V100 3-Stage Molecular Beam Epitaxy System Currently configured for 5x3" wafers Other capabilities : 1x6", 3x4", 5x3" or 12x2" substrate wafers at a time CBr4 Source Deposition chamber Preparation chamber with (2) fast entry locks Outgas stage System bench Control rack Computers Custom control software or OEM Control Rack Modules UHV Pressure Controllers Shutter Controls Valve Controls Transfer Controls, Pumpdown / Vent Controls RHEED Gun Supply RGA and temperature monitoring 4- Loop Thyristors UPS Interface Multi-Gauge, Autoranging Picoammeters (1) SRS RGA200 Quadruple Mass Spectrometer (1) Applied Epi RF Plasma Source Tuning Unit (3) Powerware Prestige EXT UPS Supplies (1) Neslab CFT-150 Recirculator (1) CTI 9600 Compressor (3) Busch Diaphragm Pumps (4) Heavy-Duty Transformers Liquid Nitrogen System Components Continuous power supply battery back up LN2 phase separator Controllers Pumps Manuals 415V, 50/60Hz.

OXFORD / VG SEMICON V100 3-Stage Molecular Beam Epitaxy System Currently configured for 5x3" wafers Other capabilities : 1x6", 3x4", 5x3" or 12x2" substrate wafers at a time CBr4 Source Deposition chamber Preparation chamber with (2) fast entry locks Outgas stage System bench Control rack Computers Custom control software or OEM Control Rack Modules UHV Pressure Controllers Shutter Controls Valve Controls Transfer Controls, Pumpdown / Vent Controls RHEED Gun Supply RGA and temperature monitoring 4- Loop Thyristors UPS Interface Multi-Gauge, Autoranging Picoammeters (1) SRS RGA200 Quadruple Mass Spectrometer (1) Applied Epi RF Plasma Source Tuning Unit (3) Powerware Prestige EXT UPS Supplies (1) Neslab CFT-150 Recirculator (1) CTI 9600 Compressor (3) Busch Diaphragm Pumps (4) Heavy-Duty Transformers Liquid Nitrogen System Components Continuous power supply battery back up LN2 phase separator Controllers Pumps Manuals 415V, 50/60Hz.

OXFORD / VG SEMICON V100 3-Stage Molecular Beam Epitaxy (MBE) System Currently configured for 5x3" wafers Other capabilities : 1x6", 3x4", 5x3" or 12x2" substrate wafers at a time CBr4 Source Deposition chamber Preparation chamber with (2) fast entry locks Outgas stage System bench Control rack Computers Custom control software or OEM Control Rack Modules UHV Pressure Controllers Shutter Controls Valve Controls Transfer Controls, Pumpdown / Vent Controls RHEED Gun Supply RGA and temperature monitoring 4- Loop Thyristors UPS Interface Multi-Gauge, Autoranging Picoammeters (1) SRS RGA200 Quadruple Mass Spectrometer (1) Applied Epi RF Plasma Source Tuning Unit (3) Powerware Prestige EXT UPS Supplies (1) Neslab CFT-150 Recirculator (1) CTI 9600 Compressor (3) Busch Diaphragm Pumps (4) Heavy-Duty Transformers Liquid Nitrogen System Components Continuous power supply battery back up LN2 phase separator Controllers Pumps Manuals 415V, 50/60Hz.

OXFORD / VG SEMICON V100 3-Stage Molecular Beam Epitaxy (MBE) System Currently configured for 5x3" wafers Other capabilities : 1x6", 3x4", 5x3" or 12x2" substrate wafers at a time CBr4 Source Deposition chamber Preparation chamber with (2) fast entry locks Outgas stage System bench Control rack Computers Custom control software or OEM Control Rack Modules UHV Pressure Controllers Shutter Controls Valve Controls Transfer Controls, Pumpdown / Vent Controls RHEED Gun Supply RGA and temperature monitoring 4- Loop Thyristors UPS Interface Multi-Gauge, Autoranging Picoammeters (1) SRS RGA200 Quadruple Mass Spectrometer (1) Applied Epi RF Plasma Source Tuning Unit (3) Powerware Prestige EXT UPS Supplies (1) Neslab CFT-150 Recirculator (1) CTI 9600 Compressor (3) Busch Diaphragm Pumps (4) Heavy-Duty Transformers Liquid Nitrogen System Components Continuous power supply battery back up LN2 phase separator Controllers Pumps Manuals 415V, 50/60Hz.

OXFORD / VG SEMICON V90 MBE system NH3 line Contamination: GaN particles Electrical issues Some valves are nonfunctional Standard V90 chamber, initially designed for GSMBE (6) Cell ports with diameter CF100 and individual cell shutters (presently used for Ga, Al, In and Si cells) (1) Central port with diameter CF100 (presently used for a NH3 injector + reflectometry port) Substrate heater for 3" x 2" or 1" x 4" Heater modified by Addon to reach 1100°C for oxide removing from Si substrate Rheed port with Canon Rheed gun and screen Pyrometer port (without pyrometer), flux gauge, chamber pressure gauge, VG mass spectrometer Loading chamber for up multiple platen Preparation chamber with ion pump No automatic transfer No outgas stage, dedicated port is available, 1 FEL Facilities: (2) Low pressure regulation boards from VG (NH3 + N2) (2) High pressure regulation boards (NH3 + N2) NH3 board and bottle are in a closed rack Primary pump Edwards Drystar (needs repair) NH3 exhaust gas abatement system from CS CLEAN SYSTEMS Heating shields for whole machine out-gassing Cells: Double filament cells for Ga and In Cold lip cells for Al, Si doping cell NH3 injector with integrated shutter Nitrogen plasma cell from Addon Stored in a cleanroom, covered in plastic.

OXFORD / VG SEMICON V100 MBE Growth System, 3" (5) 3" wafers CBr4 source Custom control software or OEM, both still supported in In-situ RHEED, RGA and temp monitoring Continuous power supply battery back-up LN2 phase separator.