Molecular Beam Epitaxy

CUSTOM / NEXGEN 440 S1 MBE MBE Growth chamber For eBeam deposition of metals With loadlock VEECO GEN II Manipulator Includes: (2) THERMIONICS LAB INC / TLI HM2 Series eGun TM (2) 10CC Crucibles with 8" OD CF mounted (2) Pneumatic shutters (2) Water interlock switches Switching e-Gun power supply: 15 kW Gun controllers filament transformer & cables (2) X-Y Beam sweep controllers Flux monitor sigma EIES guardian RHEED kSA 400 With 30eV power supply STAIB Gun computer controller With remote control box VEECO CAR 3" Dual zone with heater Power supplies Controller Substrate rotation & angle to evaporation / Loading PFEIFFER MVP 070-3 Diaphragm vacuum pump PFEIFFER Mechanical-turbo pump with DCU (2) MKS 999 Quattro EXTORR XT100 Residual gas analyzer GRANVILLE PHILLIPS 350 Ionization gauge & controller NESLAB HX300 E-Guns chiller OXFORD INSTRUMENTS Cryo-Plex 8, Diode, UHV with burst disc PFEIFFER MVP 070-3 Diaphram vacuum pump Holding system at 10-kelvin Chamber & E-Gun cooling Manuals Does not include: MKS Microvision 1-6AMU RGA Atomic hydrogen source with automated valve positioner Chiller for sample & H+ source cooling Chiller for main chamber cooling LESKER LVM940 Leak valve PC System (2) XHR 60-18 XANTREX power supplies (3) EUROTHERM controllers Optitherm III Optical fiber pyrometer Temperature range: 600°C to 1500°C GAMMA Vacuum ion pump 150T Titan DI (6) CFF VAT Valve.

OMICRON Multiprobe MBE System Main control Main chamber valve Deposition rate sensor Deposition rate measurement Adjusting screw of sample holder Baratron main chamber Baratron pre chamber Cover for the crucibles Adjustment for crucible material N2 Valve Manipulator (2) Way valves Motor and shutter Ni, Pt and Ti Option: Si, Al, Co and Cr Sample size: 1" Pressure pre chamber (6 x 10^-6 mbar) Pressure main chamber (10^-10 mbar).

OXFORD VG V80 MBE System, 2"-3" Sources: As, Sb, Al, Ga, In, Si, Be, GaTe, GaAs & GaSb Substrates Buffer chamber: Storage / Degas Load lock chamber: Loading / Unloading / Degas Pre-chamber High substrate TC temperature: 1100° C Solid state sources layout: Gallium Aluminum Arsenic valved cracker Antimony valved cracker Indium Silicon Be Dopant GaTe Dopant Growth chamber: UHV Ultra high vacuum chamber Pyrometer RHEED gun RGA Includes: (2) Ion pumps Turbo pump Dry scroll roughing pump Wafer holder Gallium cells, 50g Aluminum cells, 50g 25g DWL SUMO Indium cells DC Power supplies per cell 5CC Dopant cells for Si, Be & GaTe DC Power supply per cell CTI CRYOGENICS CT8 Cryopumps With 8200 compressors for growth chamber (2) Ion pumps for buffer & exit chambers Turbo / Dry scroll pump set for chamber Leak detector Bake out panels Sample prepare bench.

OXFORD VG V80 MBE System, 2"-3" Sources: As, Sb, Al, Ga, In, Si, Be, GaTe, GaAs & GaSb Substrates Buffer chamber: Storage / Degas Load lock chamber: Loading / Unloading / Degas Pre-chamber High substrate TC temperature: 1100° C Solid state sources layout: Gallium Aluminum Arsenic valved cracker Antimony valved cracker Indium Silicon Be Dopant GaTe Dopant Growth chamber: UHV Ultra high vacuum chamber Pyrometer RHEED gun RGA Includes: (2) Ion pumps Turbo pump Dry scroll roughing pump Wafer holder Gallium cells, 50g Aluminum cells, 50g 25g DWL SUMO Indium cells DC Power supplies per cell 5CC Dopant cells for Si, Be & GaTe DC Power supply per cell CTI CRYOGENICS CT8 Cryopumps With 8200 compressors for growth chamber (2) Ion pumps for buffer & exit chambers Turbo / Dry scroll pump set for chamber Leak detector Bake out panels Sample prepare bench.

OXFORD VG V80 MBE System, 2"-3" Sources: As, Sb, Al, Ga, In, Si, Be, GaTe, GaAs & GaSb Substrates Buffer chamber: Storage / Degas Load lock chamber: Loading / Unloading / Degas Pre-chamber High substrate TC temperature: 1100° C Solid state sources layout: Gallium Aluminum Arsenic valved cracker Antimony valved cracker Indium Silicon Be Dopant GaTe Dopant Growth chamber: UHV Ultra high vacuum chamber Pyrometer RHEED gun RGA Includes: (2) Ion pumps Turbo pump Dry scroll roughing pump Wafer holder Gallium cells, 50g Aluminum cells, 50g 25g DWL SUMO Indium cells DC Power supplies per cell 5CC Dopant cells for Si, Be & GaTe DC Power supply per cell CTI CRYOGENICS CT8 Cryopumps With 8200 compressors for growth chamber (2) Ion pumps for buffer & exit chambers Turbo / Dry scroll pump set for chamber Leak detector Bake out panels Sample prepare bench Holders, 2" & 3" 1996 vintage.

OXFORD / VG SEMICON V90 Molecular beam epitaxy system.

RIBER 49 NT 2bis Molecular beam epitaxy (MBE) system, 4 x 4" 2006 vintage.

RIBER EVA 32 MBE System.

RIBER EVA 32 MBE System, 2" Group IV MBE Grow germanium and silicon Semiconductor thin films (SiGe) B and Sb as P- and n- type dopant RHEED System with power supply and control​ Residual gas analyzer and control (RGA / Mass spectrometer)​ ​XYZ Precision sample stage / Manipulator​ Sentinel flux motoring system with power supply and control​​ Load-lock chamber (2) 40 CC E-guns (Ge and Si) (3) Effusion cells With controls: Sb Boric acid Ge Residual gas analyzer (Quadruple mass spec) RHEED Electronics control Manipulator wafers, 2" Load lock chamber Ion pump plus cryopump.

RIBER 32 Molecular beam epitaxy (MBE) system GaN Sources: (6) Solid sources (Ga, Al, Mg, Eu, Er, Si) Shutter control SVTA RF 4.5 N2 Source Shutter: N2 Auto-tuning Water cooling Ion removal power supply Gas cabinet: Up to (3) gas source controls PFEIFFER Cube MFC / Valve control Alarm indication Power supplies / Vacuum gauges: Temperature control Vacuum gauges Shutter control Cell / Substrate heater power supplies RHEED Cryo pump control Ti sublimator Substrate rotation Load lock: (4) Wafers, 2" Soption pump / Mechanical pump station Cryo pump CTI RGA Bake-out control Ion pump Gas purifier: N2 purifier: <100 ppt Liquid N2 delivery system Computer: Recipe editing Source / Substrate temperature control RGA Vacuum Base pressure: Main chamber Sources: Plasma: 600 W HT source: Al, Ga. Er, Si, Eu Dopant source: Eu, Mg.

RIBER 32 Molecular beam epitaxy (MBE) system GaN Sources: (6) Solid sources (Ga, Al, Mg, Eu, Er, Si) Shutter control SVTA RF 4.5 N2 Source Shutter: N2 Auto-tuning Water cooling Ion removal power supply Gas cabinet: Up to (3) gas source controls PFEIFFER Cube MFC / Valve control Alarm indication Power supplies / Vacuum gauges: Temperature control Vacuum gauges Shutter control Cell / Substrate heater power supplies RHEED Cryo pump control Ti sublimator Substrate rotation Load lock: (4) Wafers, 2" Soption pump / Mechanical pump station Cryo pump CTI RGA Bake-out control Ion pump Gas purifier: N2 purifier: <100 ppt Liquid N2 delivery system Computer: Recipe editing Source / Substrate temperature control RGA Vacuum Base pressure: Main chamber Sources: Plasma: 600 W HT source: Al, Ga. Er, Si, Eu Dopant source: Eu, Mg.

RIBER 32 Molecular beam epitaxy (MBE) system GaN Sources: (6) Solid sources (Ga, Al, Mg, Eu, Er, Si) Shutter control SVTA RF 4.5 N2 Source Shutter: N2 Auto-tuning Water cooling Ion removal power supply Gas cabinet: Up to (3) gas source controls PFEIFFER Cube MFC / Valve control Alarm indication Power supplies / Vacuum gauges: Temperature control Vacuum gauges Shutter control Cell / Substrate heater power supplies RHEED Cryo pump control Ti sublimator Substrate rotation Load lock: (4) Wafers, 2" Soption pump / Mechanical pump station Cryo pump CTI RGA Bake-out control Ion pump Gas purifier: N2 purifier: <100 ppt Liquid N2 delivery system Computer: Recipe editing Source / Substrate temperature control RGA Vacuum Base pressure: Main chamber Sources: Plasma: 600 W HT source: Al, Ga. Er, Si, Eu Dopant source: Eu, Mg.

RIBER 32 Molecular beam epitaxy (MBE) system GaN Sources: (6) Solid sources (Ga, Al, Mg, Eu, Er, Si) Shutter control SVTA RF 4.5 N2 Source Shutter: N2 Auto-tuning Water cooling Ion removal power supply Gas cabinet: Up to (3) gas source controls PFEIFFER Cube MFC / Valve control Alarm indication Power supplies / Vacuum gauges: Temperature control Vacuum gauges Shutter control Cell / Substrate heater power supplies RHEED Cryo pump control Ti sublimator Substrate rotation Load lock: (4) Wafers, 2" Soption pump / Mechanical pump station Cryo pump CTI RGA Bake-out control Ion pump Gas purifier: N2 purifier: <100 ppt Liquid N2 delivery system Computer: Recipe editing Source / Substrate temperature control RGA Vacuum Base pressure: Main chamber Sources: Plasma: 600 W HT source: Al, Ga. Er, Si, Eu Dopant source: Eu, Mg.

RIBER 32 Molecular beam epitaxy (MBE) system GaN Sources: (6) Solid sources (Ga, Al, Mg, Eu, Er, Si) Shutter control SVTA RF 4.5 N2 Source Shutter: N2 Auto-tuning Water cooling Ion removal power supply Gas cabinet: Up to (3) gas source controls PFEIFFER Cube MFC / Valve control Alarm indication Power supplies / Vacuum gauges: Temperature control Vacuum gauges Shutter control Cell / Substrate heater power supplies RHEED Cryo pump control Ti sublimator Substrate rotation Load lock: (4) Wafers, 2" Soption pump / Mechanical pump station Cryo pump CTI RGA Bake-out control Ion pump Gas purifier: N2 purifier: <100 ppt Liquid N2 delivery system Computer: Recipe editing Source / Substrate temperature control RGA Vacuum Base pressure: Main chamber Sources: Plasma: 600 W HT source: Al, Ga. Er, Si, Eu Dopant source: Eu, Mg.

RIBER 49 NT 2bis Molecular beam epitaxy (MBE) system, 4 x 4" Growth room unit Transfer room unit Ion pump unit: +CBr4 Gas cabinet Cryo panel container Gas-liquid separator Exhaust set (Turbo-molecular): High vacuum line CBr4 VAC Baking heater unit VAC RHEED Baking heater unit RHEED He compressor: CTI 8200 (3) Power supply racks Baking jacket PC Desk for RHEED UPS: Smart-UPS VT 400*750*H1 450 Board for Gas-liquid separator (2) Desiccators (5) Portal parts Growth room soleplate PC Desk Cryopump for cold finger Cryopump for growth room Cryopump for transfer room Cold finger chamber Gate valve for cold finger P Sell: KPC1200 Loading chamber lift Enclosure for P sell Cable LCD Monitor for PC PC for Crystal software LCD Monitor for RHEED Flexible hose for He Cover for loading chamber Support leg for cold finger Flexible plumbing (6) Cable ducts PC for RHEED (2) He compressors: CTI 9600 Suspensory Jig (10) Duct support Jig for LN2 (2) Gas-liquid separator parts (7) LN2 Ducts Manual 2006 vintage.

RIBER 32 Molecular beam epitaxy (MBE) system GaN Sources: (6) Solid sources (Ga, Al, Mg, Eu, Er, Si) Shutter control SVTA RF 4.5 N2 Source Shutter: N2 Auto-tuning Water cooling Ion removal power supply Gas cabinet: Up to (3) gas source controls PFEIFFER Cube MFC / Valve control Alarm indication Power supplies / Vacuum gauges: Temperature control Vacuum gauges Shutter control Cell / Substrate heater power supplies RHEED Cryo pump control Ti sublimator Substrate rotation Load lock: (4) Wafers, 2" Soption pump / Mechanical pump station Cryo pump CTI RGA Bake-out control Ion pump Gas purifier: N2 purifier: <100 ppt Liquid N2 delivery system Computer: Recipe editing Source / Substrate temperature control RGA Vacuum Base pressure: Main chamber Sources: Plasma: 600 W HT source: Al, Ga. Er, Si, Eu Dopant source: Eu, Mg.

RIBER 49 NT 2bis Molecular beam epitaxy (MBE) system, 4 x 4" 2006 vintage.

RIBER 49 MBE System 10 inch platen for wafers (10) Ports Main chamber: (2) CT-10 Cryopumps With LN2 baffles Large ion pump Wafer manipulator RHEED: Gun Screen Recovery module: Hg Transfer / Loadlocks: Transfer chamber with outgas stage (2) Loadlocks with cryopumps Sources: (3) Installed (2) Additional (CdTe, Te, In, and Hg).

RIBER EVA 32 MBE System, 2" Group IV MBE Grow germanium and silicon Semiconductor thin films (SiGe) B and Sb as P- and n- type dopant RHEED System with power supply and control​ Residual gas analyzer and control (RGA / Mass spectrometer)​ ​XYZ Precision sample stage / Manipulator​ Sentinel flux motoring system with power supply and control​​ Load-lock chamber (2) 40 CC E-guns (Ge and Si) (3) Effusion cells With controls: Sb Boric acid Ge Residual gas analyzer (Quadruple mass spec) RHEED Electronics control Manipulator wafers, 2" Load lock chamber Ion pump plus cryopump.

RIBER CBE-32 Reactor, 5", 2" x 1 Solid source :Si, Al, Ga, In×2, Be×2 Gas source: AsH3, PH3 Chambers: entrance, transfer, growth PHEEd, PYRO, LN2 liquid separate Scrubber for gas.