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566 RESULTS FOUND FOR: used Rapid Thermal Processors

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  • ACCUTHERMO: ALLWIN AW 810M

    ACCUTHERMO ALLWIN AW 810M Rapid thermal annealer system Manifold capable of 4 gas inputs Previous gasses: Ar & O2 Temperature range: 100C - 800°C 208VAC, 3 phase, 70A, 60Hz 2009 vintage.
  • ACCUTHERMO: ALLWIN AW 810M

    ACCUTHERMO ALLWIN AW 810M Rapid thermal annealer system, 8" Temperature range: 100°C - 800°C Manifold capable of 4 gas inputs Previous gasses: Ar & O2 Hydrogen capable Pump purge: NO 208 VAC, 3 phase, 70 A, 60 Hz 2009 vintage.
  • ACCUTHERMO: ALLWIN AW 810M

    ACCUTHERMO ALLWIN AW 810M Rapid thermal annealer system, 8" Temperature range: 100°C – 800°C Manifold capable of 4 gas inputs Previous gasses: Ar & O2 Hydrogen capable Pump purge: NO 208 VAC, 3 phase, 70 A, 60 Hz 2009 vintage.
  • AET: RX-V4

    AET RX-V4 Quartz Rapid Thermal Process unit, 4" 2 Bank configuration, (12 upper and 12 lower lamps), 3 MFC controlled gas lines (Nitrogen, Oxygen, and Forming Gas, High Temperature Pyrometer, Type K Contact TC No pumping system Refurbished.
  • AG ASSOCIATES: HEATPULSE 610

    AG ASSOCIATES Heatpulse 610 RTP system, 2",3",4", 5", and 6" Specifications: Wafer handling: Manual loading of a wafer in to the oven. Ramp up rate: programmable, 10°C to 250°C per second Steady state duration: 0 to 9999 seconds per step Ramp down rate: programmable, 1°C to 200°C per second (temperature and radiation dependent; max 80°C per second) Recommended steady state temperature range: 400°C to 1200°C ERP temperature accuracy: 3°C to -7°C Thermocouple temperature accuracy: ±2.5°C Temperature repeatability: ±3°C or better at 1150°C Power: Oven: 208V, 1Ph, 60Hz, 90A Chiller: 100/120V, 60Hz, 11A.
  • AG ASSOCIATES: HEATPLUS 2146

    AG ASSOCIATES Heatplus 2146 Rapid thermal processor, parts system, 4"-6" Oxide & Nitride Film Deposition Cassette to Cassette Handling 400°C to 1300°C Temperature Range Single chamber.
  • AG ASSOCIATES: HEATPULSE 4100

    AG ASSOCIATES Heatpulse 4100 Rapid Thermal Processor, 4", 5", 6" Features: Single Wafer Processing Precise Temp/Time Control Multiple Cycle Processing Full SECSII Capability Steady State Temperature Temperature Range: 400C - 1150C Specifications: Steady State Process Time: Programmable 0-600 Sec. Ramp-Up Rate: Programmable 10C/Sec. - 250 Degrees Includes: Pyrometer Chiller System Chiller Assorted Manuals Miscellaneous Spares 1990-1994 vintage.
  • AG ASSOCIATES: HEATPULSE 610

    AG ASSOCIATES Heatpulse 610 RTP system, 2",3",4", 5", and 6" Includes controller Specifications: Wafer handling: Manual loading of a wafer in to the oven. Ramp up rate: programmable, 10°C to 250°C per second Steady state duration: 0 to 9999 seconds per step Ramp down rate: programmable, 1°C to 200°C per second (temperature and radiation dependent; max 80°C per second) Recommended steady state temperature range: 400°C to 1200°C ERP temperature accuracy: 3°C to -7°C Thermocouple temperature accuracy: ±2.5°C Temperature repeatability: ±3°C or better at 1150°C Gas input with manually adjustable flowmeter on front of unit Quartz tube Quartz tray Includes type K thermocouple Temp uniformity: Across 6" wafer is ±2 C @ 1000°C with silicon carbide coated graphite wafer holder At lower temperatures there is a bit more variation, around ±3°C This will need the TC control to work at these low temperatures Power: Oven: 208V, 1Ph, 60Hz, 90A Chiller: 100/120V, 60Hz, 11A.
  • AG ASSOCIATES: ACCUTHERMO AW 610

    AG ASSOCIATES AccuThermo AW 610 Rapid thermal processors with chiller, 2"-6" Includes: Window Based OS Computer with Alwin 21 Software (1) Holder for 100º to 800º C (1) USB with original software backup Mouse and standard keyboard Accu Thermo AW 610 RTP system Aluminum chamber with water cooling and gold plating Isolated Quartz Tube without window Oven control board and main control board Bottom and top heating (21) 1.2 kW (each) Radiation heating lamp modules (4) Bank zones (top, front, rear and bottom) Quartz tray for 3"-6" wafers (1) Gas line (1) MFC without shut-off valve 17" LCD Monitor T-shape quartz with TC NESLAB RTE-7 Chiller 208 VAC, 3 Phase, 60 Hz, 50A 2012 vintage.
  • AG ASSOCIATES: ALLWIN21 610

    AG ASSOCIATES AllWin21 610 Rapid Thermal Processing (RTP) Wafer System, 2008 vintage.
  • AG ASSOCIATES: HEATPULSE 610

    AG ASSOCIATES Heatpulse 610 RTP system, 2",3",4", 5", and 6" Includes controller Specifications: Wafer handling: Manual loading of a wafer in to the oven. Ramp up rate: programmable, 10°C to 250°C per second Steady state duration: 0 to 9999 seconds per step Ramp down rate: programmable, 1°C to 200°C per second (temperature and radiation dependent; max 80°C per second) Recommended steady state temperature range: 400°C to 1200°C ERP temperature accuracy: 3°C to -7°C Thermocouple temperature accuracy: ±2.5°C Temperature repeatability: ±3°C or better at 1150°C Gas input with manually adjustable flowmeter on front of unit Quartz tube Quartz tray Includes type K thermocouple Temp uniformity: Across 6" wafer is ±2 C @ 1000°C with silicon carbide coated graphite wafer holder At lower temperatures there is a bit more variation, around ±3°C This will need the TC control to work at these low temperatures Power: Oven: 208V, 1Ph, 60Hz, 90A Chiller: 100/120V, 60Hz, 11A.
  • AG ASSOCIATES: HEATPULSE 8108

    AG ASSOCIATES Heatpulse 8108 Rapid thermal processor SMIF/Indexer interface: Retrofitable Process capability: .11 um, .13 um, .15 um, .18 um (1) Chamber N2 Load lock (1) Process kit for chamber PM Special tool/jig MFC: Analog, STEC SEC-4500M Quartz boat size: (1) Slot Quartz boat material: Quartz Inner tube material: Quartz Gas detector: Riken Keiki Model: GD-K7D II Special gas: NH3, O2 Manual Software 200, 60 Hz, 3-Ph Currently installed 1996 vintage.
  • AG ASSOCIATES: HEATPULSE 610

    AG ASSOCIATES Heatpulse 610 Rapid thermal processor Includes AG 210 Back-up controller.
  • AG ASSOCIATES: HEATPULSE 610

    AG ASSOCIATES Heatpulse 610 Rapid Thermal Processor Annealing System, 2" - 6" Specifications: Closed loop temperature control using pyrometeror thermocouple temperature sensor Single wafer annealing with precision temperature control Accommodates wafer sizes from 2" to 6" depending on tray (tray not included) 1350°C peak temperature. 400°C to 1150°C recommended steady state temperature Heating rate of 10°C/sec to 300°C/sec Power Requirements: 208 VAC, 60 Hz Hour Meter Reads: 770.2 hours 1996 vintage.
  • AG ASSOCIATES: HEATPULSE 610

    AG ASSOCIATES Heatpulse 610 Rapid thermal processor 1993 vintage.
  • AG ASSOCIATES: HEATPULSE 210T-02F

    AG ASSOCIATES Heatpulse 210T-02F Rapid thermal processor RTA Control unit: 210-T02.
  • AG ASSOCIATES: HEATPULSE 4108

    AG ASSOCIATES Heatpulse 4108 Rapid Thermal Processor 208V, 50Hz, 3Ph Currently de-installed 1995 vintage.
  • AG ASSOCIATES: HEATPULSE 8800

    AG ASSOCIATES Heatpulse 8800 Rapid thermal annealer, 8" Process: Rapid Thermal Processor Software: Windows 3.1 Reserved batch operation: Possible Wafer shape: SNNF (Semi notch no flat) Wafer cassette: 8" Plastic Miraial SMIF Interface: No Wafer aligner: Included End effector: Hot end effector Gas: Gas Box 1: N2 Gas Box 2: O2 Gas Box 3: NH3 Chamber material: Aluminum Lamp zone: 10-zone Control thermocouple: Short wave pyrometer and ez-DTC Max temperature: 1,200º C within 15 minutes Place of control thermocouple: Backside of wafer Chiller for oven: Neslab System II Maximum system operating current (Amps per phase): 125 Maximum lamp current (Amps per phase): 90 200 V, 60 Hz, 3 Ph 1998 vintage.
  • AG ASSOCIATES: HEATPULSE 8108

    AG ASSOCIATES Heatpulse 8108 Rapid thermal processors Standalone Stored in warehouse.
  • AG ASSOCIATES: HEATPULSE 610

    AG ASSOCIATES Heatpulse 610 Rapid thermal processor 1993 vintage.
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