loading

1312 RESULTS FOUND FOR: used Reactors

1 2 3 4 5 6 Next
  • AET: GEMINI III E

    AET Gemini III E Enhanced dual-chamber epitaxial reactor, 4"-6" TSC Mini bubbler Cooling water inlet & outlet N2 H2 TCS PH3 HCl ACID Exhaust General exhaust Manual Make-up air Volume Cooling air withdrawal: Flow Pressure Temp. rise Duct size Epitaxial growth machine (lpm) (mm of H2O NEG.) (°C Max) (cm) Chamber 1 236 8 90 20 Chamber 2 236 8 -- 20 Console 141 8 -- 10 Gas panel 236 8 -- 15 Total 849 Approximated heat flow dissipated @ 1150 C: Source Flow Temp rise (°c) Heat removed RF Coil cooling water 27.36 (lpm) 15 28.5 kW Reactor exhaust 150 SLM 65 <0.5 kW Reactor cooling water 45.6 (lpm) 11 35 kW Cabinet exhaust 236 (lps) 80 24 kW Temperature: 200°C ± 1.00°C Humidity: 50% +/- 20% Rating: 1000 Power: Main body power: 220V, 1 Phase, 40A, 8.8 kVA RF Generator power: 460V, 3 Phase, 184 kVA Scrubber power: 220V, 1 Phase, 9 kVA.
  • AIXTRON: 2400 G1

    AIXTRON 2400 G1 MOCVD Reactor 15 x 2" and 8 x 3" Configuration: (2) Ga lines (2) In (2) Al (1) Mg (1) Zn (1) Spare (2) As (1) Ph (1) Si2H6 (1) HCl (1) Spare Temperature range: Up to 850°C Used for AlInGaP LEDs Gases used: Arsine, Phosphine, DiSi2H6, HCl Windows based operating system: Upgraded from OS9 to CASE Johnson palladium H2 purifier Usage: ~4,000 hours Installed with N2 and H2 disconnected Purged with N2 before shut down 1992 vintage.
  • AIXTRON: AIX 2400/2600 G3

    AIXTRON AIX 2400/2600 G3 MOCVD system LED Chip 2001 vintage.
  • AIXTRON: AIX 200/4

    AIXTRON AIX 200/4 MOCVD System For LED or Optical devices: 2", 3", 4" Average Throughput: up to 2,700 wafers per year Wafer Capacity: 1 x 4" 1 x 3" 1 x 2" Applications: Ⅲ-Ⅴ Compounds Ⅱ-Ⅵ Compounds Oxides Facility Requirements: Power Supply: 3/N/PE/60Hz*/200V/AC/*+-5% or 3/N/OE/50Hz*/400V/AC/+-5% Max. power consumption: ~20 kVA Gas Supply: N2 6.0 H2 Pd-Diffused AsH3 100% PH3 100%, SiH4 100%, P inlet each 3-3.5 bar Forming Gas 5% - 10% H2 in N2 Pneumatic: N2 techn. 7-8.5 bar Cabinet Ventilation: 2 x 1000m3/h Wafer cooling: Total Flow 4l/min at Tinlet < 25℃ < 6 bar Differential Pressure < 4 bar Currently warehoused 1998 vintage.
  • AIXTRON: VP 2400HW

    AIXTRON VP 2400HW EPI Reactor Wafer configurations: 7x3", 6x4" For SiC based materials Type: Modular CVD system for medium scale production Gas handling: Electropolished 316 stainless steel tubing VCR Connectors all orbital welded Electronic mass flow and pressure controllers Susceptor / Ceiling: High purity graphite with special coating Rotating substrate holder Reactor: Disk-shaped horizontal laminar flow stainless steel Capacity: 6x4" (3") wafers Heater: (2) RF-lnduction heaters: 80 kW, 20-50 kHz Maximum reactor temperature: 1600° C Pressure range for process: 100 to 1000 mbar for overall flows < 100 slm MO Temperature control: Recirculating controlled temperature baths Accuracy: 0.05°C Range: -10°C to +60°C Mass flow control: Electronic mass flow controllers (HiTec) Pressure control: MKS Baratrons and valves Back pressure controllers: HiTec pressure controllers Vacuum system: EBARA ESA70W-D Dry process pump Conditions (typical): Total carrier gas flow at process 80 slm Process gases (15) Slm auxiliary lines Power consumption: Electronics: Max 22 kVA Heater: Max 88 kVA 2012 vintage.
  • AIXTRON: 2400 G2

    AIXTRON AIX 2400 G2 Reactor InGaAsP Wafer capacity: Heat package not included Wafer configuration: 15x2", 11 x 2", 8x3", 5x4" Gas supply: N2 6.0, H2 Pd-Diffused, AsH3 100% PH3 100%, SiH4 100% Pinlet each 3-3, 5 bars Carrier gas consumption < 20 l/min Forming gas: 5%-10% H2 in N2 Pneumatic: N2 Techn, 7-9 bars Cabinet ventilation: 2 x 1000 m3/h Water cooling: Total flow 4 l/min at Tinlet, < 25°C Pinlet, < 6 bars Differential pressure > 4 bars Power supply: 3Ph, 60Hz, 480VAC, ±5%-60 kVA (Heater) 3N/Ph, 60 Hz, 208VAC, ±5%-20 kVA (Electronics) (or) 3N/Ph, 50Hz, 400AC, ±5%-80 kVA.
  • AIXTRON: AIX 2400 G3

    AIXTRON AIX 2400 G3 InP Reactor 11x2” (2) AsH3 PH3 SiH4 H2Se (2) CCl4 HCl (2) TMGa (3) TMIn (2 with Epison III) TMAl DEZn (2) H2 Pd cell purifiers NESLAB Chiller 1999 vintage.
  • AIXTRON: RF200

    AIXTRON RF200 MOCVD System Single wafer R&D Includes: High temperature machine for (Al, IN) GaN deposition GaN Nanowire deposition Doping lines: N-Doping P-Doping Cathodoluminescence (CL) Vacancies / Broken bonds Impurities Broad line for heavy field Mono chromatic images RIE Parameters: Temperature Applied power Pressure RIE Steps: Sphere shrinkage Polymer removal NR Etching Wet chemical etch: Transport of reactants to surface Surface reaction Transport of reaction Process parameters: Composition Temperature Duration 10% KOH in ethyl glycol at 80°C: Uniform etch Apparent surface etching: No NR Size distribution: Silica spheres: 700 nm RIE: 605 nm KOH Etch: 586 nm Etching rate: KOH Etch: 5 nm/1 min Complex thermodynamics: Heat Precursor mass Chemical reactions Absorption / Desorption Transport of leftovers Precursors: TMGa, TMIn NH3, SiH4, Cp2Mg Carrier gases: N2 or H2 Reaction in reactor: Ga(CH3)3 + NH3 --> GaN + 3CH4 In(CH3)3 + NH3 --> InN + 3CH4.
  • AIXTRON: G3 2600

    AIXTRON G3 2600 MOCVD Systems, 4" LED for GaN Wafer size : 4" x 8", 2" x 24" Heating type: RF Induction heater Epi-tune: In-situ reflectance spectra MO Source: TMGa, TEGa, Cp2Mg, TMIn, TMAl Operating system: Windows Gas system: Gas line: VCR Type MFC: Bronhost, N2 / H2 / HCL / SiH4 / NH3 Carrier gas: H2 Flow 70L/min; N2 flow 70L/min Vacuum system: Process pump: EBARA ESA25D Filter: Exhaust gas filter with separate water cooling unit Pressure control: MKS651 Controller, throttle valve Cooling system: Cooling liquid: Water Maximum inlet pressure: < 6 Bar Differential pressure: > 4 Bar Inlet temperature: < 25º C Outlet temperature: < 65º C Includes: GMS Cabinet Reactor cabinet Exhaust and chamber Scrubber RF Generator Particle filter Pump Power supply: 208 V, 50/60 Hz, 3 Phase 2007 vintage.
  • AIXTRON: 2400 G3-HT

    AIXTRON 2400 G3-HT Metal organic chemical deposition (MOCVD) system 2004 vintage.
  • AIXTRON: 2400 G3-HT

    AIXTRON 2400 G3-HT Metal organic chemical deposition (MOCVD) system 2004 vintage.
  • AIXTRON: 2400 G3-HT

    AIXTRON 2400 G3-HT Metal organic chemical deposition (MOCVD) system 2004 vintage.
  • AIXTRON: AIX 2800 G5 HT

    AIXTRON AIX 2800 G5 HT MOCVD System, 2"-6" GaN Chamber: 56 x 2" / 8 x 6" Temperature monitor: Photrix / EPI TT Hydride lines: NH3-1 / NH3-2 / SiH4 MO Source: TMGa-1, TMGa-2, TMAI-1, Cp2Mg-l, Cp2Mg- 2, TMIn-1, TMIn-2, TEG-1, TEG-2 Main body RF Generator: 1210 mm(L) x 800 mm(W) x 2300 mm(H) Main pump: EBARA ESA80W-HDF Pump: (2) Scroll pumps Monitor: Photrix LWL Luxtron Monitor: EpiTT x GS x 405 nm Wiring: 4 Wire + Ground Power: 400 / 230 VAC, 3-Phase 2011 vintage.
  • AIXTRON: RF200

    AIXTRON RF200 MOCVD System R&D Single wafer, 2" HT GaN Growth Includes: High temperature machine for (Al, IN) GaN deposition GaN Nanowire deposition Doping lines: N-Doping P-Doping Cathodoluminescence (CL) Vacancies / Broken bonds Impurities Broad line for heavy field Monochromatic images RIE Parameters: Temperature Applied power Pressure RIE Steps: Sphere shrinkage Polymer removal NR Etching Wet chemical etch: Transport of reactants to surface Surface reaction Transport of reaction Process parameters: Composition Temperature Duration 10% KOH in ethyl glycol at 80°C: Uniform etch No apparent surface etching NR Size distribution: Silica spheres: 700 nm RIE: 605 nm KOH Etch: 586 nm Etching rate: KOH Etch: 5 nm/1 min Complex thermodynamics: Heat Precursor mass Chemical reactions Absorption / Desorption Transport of leftovers Precursors: TMGa, TMIn NH3, SiH4, Cp2Mg Carrier gases: N2 or H2 Reaction in reactor: Ga(CH3)3 + NH3 --> GaN + 3CH4 In(CH3)3 + NH3 --> InN + 3CH4.
  • AIXTRON: G5 HT

    AIXTRON G5 HT MOCVD System GaN.
  • AIXTRON: AIX 200

    AIXTRON AIX 200 MOCVD Reactor.
  • AIXTRON: AIX 2400 G3

    AIXTRON AIX 2400 G3 InP Reactor 11x2” (2) AsH3 PH3 SiH4 H2Se (2) CCl4 HCl (2) TMGa (3) TMIn (2 with Epison III) TMAl DEZn (2) H2 Pd cell purifiers NESLAB Chiller 1999 vintage.
  • AIXTRON: CRIUS II

    AIXTRON Crius II MOCVD System.
  • AIXTRON: AIX 2800 G5 HT

    AIXTRON AIX 2800 G5 HT MOCVD System, 2"-6" GaN Chamber: 56 x 2" / 8 x 6" Temperature monitor: Photrix / EPI TT Hydride lines: NH3-1 / NH3-2 / SiH4 MO Source: TMGa-1, TMGa-2, TMAI-1, Cp2Mg-l, Cp2Mg- 2, TMIn-1, TMIn-2, TEG-1, TEG-2 Main body RF Generator: 1210 mm(L) x 800 mm(W) x 2300 mm(H) Main pump: EBARA ESA80W-HDF Pump: (2) Scroll pumps Monitor: Photrix LWL Luxtron Monitor: EpiTT x GS x 405 nm Wiring: 4 Wire + Ground Power: 400 / 230 VAC, 3-Phase 2011 vintage.
  • AIXTRON: G3

    AIXTRON G3 Metal organic chemical deposition (MOCVD) systems.
Show per page
1 2 3 4 5 6 Next