Used ASM A412 Doped Poly #9244651 for sale

ASM A412 Doped Poly
ID: 9244651
Wafer Size: 12"
Furnaces, 12".
ASM A412 Doped Poly is a high-temperature diffusion furnace specifically designed for doped polysilicon production. It offers the highest process temperature up to 1475°C and a high temperature uniformity of ±3°C, ensuring optimal trapping and temperature control during the process. The advanced PID (Proportional-Integral-Derivative) control technology ensures accurate monitoring and control of interface temperatures. The powerful thermal management insures a fast and uniform heating of wafers up to 4.5" diameter, providing homogeneous dopant spread and improved annealing quality. The ability to accurately control the flow of gases throughout the equipment ensures that gases are optimally distributed in the chamber, resulting in a safe and efficient process. A412 Doped Poly comes equipped with a range of accessories, including a water-cooled, coaxial quartz tube, a Quartz Boat Loader, a process Wafer loader, a stainless steel Annealing Chamber, and a Gas Detection System. The Gas Detection Unit is an integrated component that monitors the level of gases in the Annealing Chamber, ensuring safety from any hazardous byproducts, while the Wafer loader securely transfers wafers between the stainless steel annealing chamber and the controlled environment. Additionally, the water-cooled Quartz Tube is engineered for optimal isolation and cooling of the entrance point of the gases to compensate for any thermal conductivity, improving the heat transfer, and thus the overall processing time. In conclusion, ASM A412 Doped Poly is an advanced diffusion furnace designed for doped polysilicon production and offers uniform heating up to 1475°C. It is packed with features and accessories, such as the gas detection machine, wafer loader, quartz boat loader, and water-cooled quartz tube, to ensure efficient and correct flow of gases for a safe, uniform and fast process. With A412 Doped Poly, users can achieve a high quality of annealing with homogeneous dopant spread.
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