Used CENTROTHERM Parallel plate for Silicon nitride deposition system #293669093 for sale

CENTROTHERM Parallel plate for Silicon nitride deposition system
ID: 293669093
Size: M2.
CENTROTHERM Parallel plate for Silicon nitride deposition equipment is a diffusion furnace and accessory system designed to address a range of semiconductor applications. The diffusion furnace provides uniform heat processing and uniform coating of silicon nitride with the help of a sublimator designed with two parallel plates. The unit is designed to have a single conical design for bottom chambering that fits into the body of the machine. The top chamber is constructed of high-temperature resistant material and provides a vacuum plate accommodating two parallel plates. An externally controlled inert gas feed is also provided that helps control the sublimation process, allowing for precise control of the concentration of the nitride silicate molecules and preventing over-doping of the substrate. The tool also features a patented hot zone design that offers improved temperature uniformity across the heated area. The symmetric heating source creates a consistent temperature range that is also easy to adjust and control. In addition, the asset also offers excellent temperature uniformity over the entire heated area. The model is suitable for both the development and manufacturing of Silicon Nitride products. For product development, the equipment features a range of conventional and advanced hot-wafer processing methods. This includes deposition processes like atomic layer deposition (ALD) and chemical vapor deposition (CVD), as well as annealing, etching, and metal contact formation. Parallel plate for Silicon nitride deposition system is highly compatible with a range of materials and substrates. Depending on the specific application, different coating materials such as DLC, LPCVD, and PECVD silane can be used. Additionally, the unit is also compatible with metals, glass, ceramics, and plastics. The machine is also designed with a unique exclusion zone inside the top chamber, which helps reduce the chance of the SiNx molecules hitting the walls and creating a blockage. An easy to use touch screen controller is provided that helps facilitate operation and monitoring of all tool elements. The controller also offers communication with external systems as well as online monitoring of the process parameters in real time. In conclusion, CENTROTHERM Parallel plate for Silicon nitride deposition asset is a versatile and efficient model for a range of semiconductor applications. Thanks to its advanced features and compatibility with a range of materials and substrates, the equipment provides an efficient and uniform diffusion processing of Silicon Nitride molecules.
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