Used HITACHI / KOKUSAI DJ-1223VN #9377453 for sale

HITACHI / KOKUSAI DJ-1223VN is a diffusion furnace and accessories package. The diffusion furnace utilizes a low pressure and high temperature environment to diffuse doping agents into a semiconductor wafer, thereby forming high electrical performance devices. HITACHI DJ-1223VN package includes a base diffusion furnace, top-loading ultra-high vacuum cover, 500W lamp assembly, quartz tube, exhaust hood, exhaust fan, insulation, and all necessary control circuitry required for operation. The base of the diffusion furnace is constructed with the NF2600A high temperature alloy which is capable of withstanding temperatures up to 2400°C and is designed with a low radiation loss structure for excellent thermal efficiency. The ultra-high vacuum cover is constructed of clean stainless steel and is designed for use with a vacuum of 5 x 10-6 Torr. The lamp assembly is composed of 500W of halogen lamps that can be controlled digitally from the control circuit; this allows for the precise selection of lamp intensity for a variety of applications. The quartz tube is designed to enable viewing of the wafer during processing and is set up to connect to an optical pyrometer while providing ultra-high vacuum. The exhaust hood is used to provide clean air to the diffusion furnace, and the exhaust fan is used to pull gases generated from the process away from the operator. The insulation used to stop the transfer of heat from the diffusion furnace is manufactured with MN sercon and aluminum board, providing excellent thermal stability and high mechanical strength while keeping heat away from outside sources. The control circuits used to operate the lamp assembly and other components in the package are composed of power supplies, high voltage power regulators, and digital-analog integrated circuits, all of which are designed to provide precision control of the operating process. Overall, KOKUSAI DJ1223VN is an exceptionally capable diffusion furnace and accessories package. This unit allows for precise control of the doping process in semiconductor wafers, providing a highly efficient and reliable tool for creating high performance devices.