Used HITACHI KOKUSAI Quixace LV #9293900 for sale

HITACHI KOKUSAI Quixace LV
ID: 9293900
Wafer Size: 12"
Vintage: 2006
Furnace, 12" Process: Boron-Doped Poly 2006 vintage.
HITACHI KOKUSAI Quixace LV diffusion furnace and accessories are designed for high-quality processing of semiconductors and other devices. This equipment is equipped with advanced high-temperature technology, ensuring repeatable temperature uniformity across the entire wafer. It utilizes two layers of integral furnaces to protect the substrate from external temperature fluctuations and control thermal gradients. The upper temperature of the furnace is 1400°C, with a temperature distribution that is better than ±7°C. It also features advanced thermal forecasting to improve accuracy and reduce process time. Quixace LV system utilizes a single aluminized graphite insulation unit that helps to maintain superior temperature uniformity at higher temperatures. It also provides strong insulation to prevent heat loss, which helps conserve energy in the process. This machine is fully automated and integrated with the AmpleX™ recipe development and execution platform for optimal efficiency. HITACHI KOKUSAI Quixace LV also features advanced cyclic control capabilities. This allows for precise control of temperatures and time-dependent diffusion processes with minimal excursion. The furnace is further supported by a variety of accessories, including quartz-free bellholders, a quartz-free lift, and a delta resistance heating tool. These accessories further enhance the asset's performance to provide superior results. Quixace LV model is designed for up to eight furnaces and includes a wide array of advanced safety features. It is equipped with higher capacity exhausts, emergency shutoff valves, a low level interlock equipment, and an over temperature protection function. Additionally, it is equipped with a particle trap heater, a gas preprocessing unit, and a ceramic Wafer Process Module that work together for efficient operation. HITACHI KOKUSAI Quixace LV can be used with various substrates, including silicon, silicon-based compounds, silicon oxides, and other materials. This system is ideal for semiconductor manufacturing, as it offers superior performance, enhanced safety features, and advanced process technology in one reliable platform.
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