Used KOKUSAI CX3000 #9291199 for sale

KOKUSAI CX3000 is a diffusion furnace designed to optimize the doping or bonding of substrates in a range of semiconductor processes. As a thermal diffusion furnace, KOKUSAI CX-3000 features a single-zone heating chamber and a hot zone that can be used for silicon or compound semiconductor devices. These two zones provide precise and reliable control of temperature and atmosphere to accommodate different materials for the deposition of films, thinning or bonding of wafers and other important processes. The furnace has an outer dimension of L1400xW700xH1715mm, while the inner dimensions measure L1,100mm x W600mm x H1430mm. It is made from quartz or other material and has a temperature range of 200-1020°C with a resolution of ±2°C. CX3000 furnace can also reach a maximum temperature of 1,160°C for rapid annealing processes. The temperature can also be programmed to accept a variety of thermal strips. CX-3000 furnaces have an adjustable base along with a replaceable top cover plate, both of which can be configured to fit most operations. Additionally, it features a variety of optional accessories like an air slide, motorized doors, differently positioned heaters and blowers. It also has a powerful motor-driven blower that helps with quicker heating and cooling of the inside chamber. KOKUSAI CX3000 furnace is equipped with fool-proof control systems such as PID auto-tuning systems that help maintain the temperature constant throughout the diffusion process. This prevents wastage of time and materials due to sudden temperature changes. The furnace's gas unit and water-cooled solenoid valve control the flow of gas in and out, helping to achieve the highest uniformity both inside and outside of the chamber. The system also has embedded software and hardware that ensures minimal disturbances during operation. KOKUSAI CX-3000 diffusion furnaces feature the latest next-generation quartz crystal technology and can be used for various processes including ion implantation, oxidation, annealing and regenerative doping. The furnace is suitable for smaller scale production as well as for more advanced and complex photovoltaic and microelectronic production. It is suitable for a variety of different materials like silicon, gallium arsenide, indium phosphide and nitride semiconductors.