Used KOKUSAI DJ-853V-8BL J2 #293729523 for sale

ID: 293729523
Wafer Size: 6"
Vintage: 2000
Furnace, 6" Paint color: Ivory LC-750 O2 Analyzer Cassette: Normal I/O CX3002B Main controller CX1223 Mechanical controller OMRON CS12G Sequence controller CX3202 Gas controller CQ1600 Furnace temperature controller DN-150V Furnace overtemp detector RIKEN KEIKI GD-D8V Sensor Detecting H2 Gas Host communication Host computer I/F HSMS Gas system: Process gas: N2, H2 FUJIKIN Manual valve FUJIKIN Air-Operated valve MILLIPORE Filter Veriflow regulator MFC STEC / SEC-7330 Nagnano PT Sensor DPM Nagano Cassette handling: (18) Cassette storages (25) Wafer cassettes Fork type: 1+4 VAC Fork wafer presence sensor Fork variable pitch Install option: Gas flow chart panel Operation panel 2000 vintage.
KOKUSAI DJ-853V-8BL J2 diffusion furnace is a cutting-edge thermal processing equipment employed in the semiconductor industry for the purpose of diffusing dopants into silicon wafers. The diffusion furnace encompasses advanced features and functionalities that enable precise control over the diffusion process, ensuring high efficiency and repeatability in semiconductor manufacturing. One of the key components of DJ-853V-8BL J2 diffusion furnace is the quartz tube, which serves as the chamber where the silicon wafers are loaded for the diffusion process. The quartz tube is highly durable and capable of withstanding high temperatures, making it ideal for maintaining a stable thermal environment during the diffusion process. Additionally, the quartz tube is designed to ensure uniform heat distribution, thereby facilitating consistent diffusion results across the entire wafer surface. The diffusion furnace is equipped with a high-temperature heating element made of robust materials that can reach temperatures up to 1200°C or higher, depending on the specific requirements of the diffusion process. The heating element is crucial for providing the necessary thermal energy to drive the diffusion of dopants into the silicon wafers, ensuring that the process is carried out efficiently and effectively. To control the temperature within the diffusion furnace, KOKUSAI DJ-853V-8BL J2 features a sophisticated temperature control equipment comprising precision thermocouples and heaters. The temperature control system allows for accurate monitoring and adjustment of the furnace's temperature profile, ensuring that the diffusion process is carried out under optimal conditions. This precise temperature control capability is essential for achieving the desired dopant profile and diffusion depth in the silicon wafers. In addition to temperature control, the diffusion furnace is equipped with a gas delivery unit that enables the introduction of dopant gases into the quartz tube. The gas delivery machine is designed to ensure precise flow control and mixing of dopant gases, allowing for uniform diffusion of dopants across the wafer surface. This feature is critical for achieving uniform dopant concentration profiles and minimizing variations in device performance. Moreover, DJ-853V-8BL J2 diffusion furnace comes equipped with an advanced process control tool that enables users to define and execute sophisticated diffusion recipes with a high degree of flexibility and customization. The process control asset allows for the precise timing of gas flow, temperature ramping, and other parameters, enabling users to tailor the diffusion process to meet specific requirements and achieve optimal results. Overall, KOKUSAI DJ-853V-8BL J2 diffusion furnace is a state-of-the-art thermal processing equipment that offers advanced capabilities for diffusing dopants into silicon wafers with high precision and efficiency. With its robust construction, precise temperature control, gas delivery model, and advanced process control features, the diffusion furnace is well-suited for demanding semiconductor manufacturing applications where accurate and repeatable diffusion processes are paramount.
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