Used KOKUSAI Quixace II ALD Nitride #9397062 for sale

KOKUSAI Quixace II ALD Nitride is a diffusion furnace designed to handle a variety of thin-film deposition and ion implantation processes. It is a single chamber diffusion furnace which is designed to provide superior process control for the deposition of multi-layered thin films and the most complex dopant profiles. The equipment is capable of processing up to 38 wafers simultaneously, eliminating waiting times and maximizing production throughput. Quixace II ALD Nitride diffusion furnace offers a wide variety of process options. It enables a combination of PECVD and ALD systems which enables the user to deposit desired material with higher uniformity and greater reproducibility. The pressurized system can provide a higher deposition rate, allowing production throughput to be further enhanced. The process options also include high-temperature annealing and RF ion implantation, allowing the user to create the most complex dopant profiles. KOKUSAI Quixace II ALD Nitride diffusion furnace has automated process controls for precise and repeatable results. The unit is adapted for autonomous operation, allowing the user to modify and monitor the various process parameters instantly. It also has an inbuilt cooling machine which allows the tool to process high temperature processes continuously without causing any damages to the wafers. The flexibility of Quixace II ALD Nitride enables an optional loading asset to be added and integration with other systems in a fully automated vacuum processing line. This enables the user to have total control over the substrate production throughput. KOKUSAI can also supply additional accessories such as a robot arm for wafer handling, and cryopump and mechanical vacuum pumps for a fully automated model. Overall, KOKUSAI Quixace II ALD Nitride diffusion furnace is a highly advanced equipment for creating complex thin films and dopant profiles. Its automated process controls, wide variety of process options and ability to efficiently handle high volume production of wafers makes it the perfect choice for thin-film and ion implantation applications.