Used KOKUSAI Quixace II ALD Oxide #293641469 for sale

KOKUSAI Quixace II ALD Oxide is a diffusion furnace and accessory designed for the advanced oxidation and deposition processes of integrated circuit (IC) wafers. The equipment is composed of a load lock chamber, a process chamber, a vacuum system and an energy source. This diffusion furnace is designed to handle ultra-thin wafers (down to 10 nm thick) with great precision, allowing for deposition of high-quality and uniform oxide layers. Quixace II ALD Oxide provides three main capabilities, chemical vapor deposition (CVD), thermal oxidation, and rapid thermal oxidation (RTO). KOKUSAI Quixace II ALD Oxide utilizes the latest advances in low-pressure chemical vapor deposition (LPCVD) and aerosolized CVD (ACVD) to provide highly uniform and reproducible wafer surface deposition for ICs. This unit effectively deposits dielectric layers on ICs to form complex patterns, including wiring and passive/active structural materials. The typical gases used for the deposition processes include silane, oxygen, and ammonia. The thermal oxidation process carried out in Quixace II ALD Oxide's process chamber are optimized for uniform growth and depletion of oxide layers on IC walls. Temperatures are pre-programmed and can be adjusted within the temperature range of 150°C to 900°C with excellent uniformity across the entire wafer surface. Finally, the Rapid Thermal Oxidation (RTO) capability of KOKUSAI Quixace II ALD Oxide provides ultra-fast oxidation rates and deposition of oxides on ICs without compromising thermal uniformity. The RTO process is carried out in the load lock chamber using temperatures of up to 1200°C to rapidly form high-quality protective layers on IC surfaces. Quixace II ALD Oxide machine is a reliable, convenient, efficient and accurate for providing IC wafer oxidation and deposition. It is designed to offer process consistency, repeatability, and tight process control making it an ideal choice for laboratories engaged in high-precision work.