Used KOKUSAI Quixace II #9355289 for sale

KOKUSAI Quixace II is a state-of-the-art crystalline-oxide thin-film deposition equipment. It is a diffusion furnace with a range of accessories designed to make it easy to deposit and etch crystalline-oxide thin films on a variety of substrates with tight control. The system is equipped with a precise electronic positioning unit, a diffusion source, a photolithography tool, and a sputtering tool. The electronic positioning machine allows the user to reposition the substrate holder and the inductively coupled plasma (ICP) source precisely within a small window of the total chamber dimensions. This allows for precise film growth rate controls, doping, and surface cleanliness, while also minimizing contamination risks. The diffusion source provides a uniform temperature profile and high-purity oxygen, allowing for reliable and uniform film deposition. The photolithography tool allows for precise patterning of films on the substrate, and the sputtering tool enables deeper etches in order to create highly detailed structures. KOKUSAI QUIXACE-II user interface is simple and intuitive, allowing for quick set up and deposition process. The user friendly graphic display allows for easy selection of process parameters and changes. The software allows for the selection of different depositions per layer such as nitrogen doping, layer thickness control, and so on. These allow for excellent control of the desired precise patterning and deposition. In addition, Quixace II comes with a range of advanced automatic safety features. It is equipped with a warning tool to alert the user at the first sign of any hazards. Furthermore, it is designed in a way that the user can manually control the ICP source power when the deposition is in progress. This reduces the risks associated with accidental misfiring of ICP sources due to malfunction. Due to its features, QUIXACE-II is an invaluable tool for thin-film deposition research and development. Its advanced features and safety systems enable precise control of the deposition process, perfecting the development of cutting-edge crystalline-oxide thin films.