Used KOKUSAI Quixace Ultimate ALD SiO2 #9208965 for sale

KOKUSAI Quixace Ultimate ALD SiO2 is an advanced diffusion furnace with accessories designed especially for atomic layer deposition (ALD) of silicon dioxide (SiO2) thin films. This equipment provides a reliable and repeatable process for the deposition of high-quality, dielectric thin films on a range of substrates. The diffusion furnace includes a high-temperature chamber with a range of temperature settings and a rotating arm for even evaporation of material, along with a built in gas delivery system that allows for the precise control of flow and pressure. The accessory kit provides all the necessary components for efficient ALD of SiO2, such as an alumina reaction chamber, wafer holder, quartz crucible, and temperature sensors. Additionally, the Ultimate ALD SiO2 unit includes detailed process parameters and recipes, and support for manual operation, allowing for complete control over the ALD process. The quartz crucible enables users to deposit films with excellent homogeneity, providing consistent results from wafer to wafer. The wafer holder and structured baskets provide uniformity of delivery during evaporation processes, ensuring an even deposition of material over the entire surface of the substrate. The alumina reaction chamber ensures automated exposure to the desired gas mixture for the ALD process, creating a high quality silica-based thin film. The pressure, temperature, and gas mixture can all be adjusted with the sensitive controls of the machine, allowing for the optimization of film properties and throughput. Quixace Ultimate ALD SiO2 tool meets the needs of both laboratory and production-scale applications. Even in the most challenging industrial applications, the Ultimate ALD SiO2 asset offers high repeatability, excellent process control, and full control over the deposition process. Combined with its comprehensive safety features, the Ultimate ALD SiO2 model is an ideal choice for those looking for an efficient, cost effective method of deposition of dielectric thin films.