Used MRL 1148G2 #9192211 for sale
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MRL 1148G2 is a diffusion furnace and accessories designed for the production of silicon wafers of prime quality. This furnace consists of an alumina, olivine, or graphite heating chamber. It has a maximum operating temperature of 1,800°C, and provides an electron beam with a power ranging from 15kW to 19kW. The integrated programmable controls enable the user to select the desired process parameters for high repeatability of the diffusion process. The integrated infrared pyrometer ensures uniform sample area temperature while the internal oxygen flowmeter helps maintain the desired diffusion process atmosphere. MRL 1148 G2 also includes a rapid cooling process for avoiding the formation of brittle oxides and stresses during the diffusion process, and a Quartz bubbler for monitoring the diffusion process atmosphere. The quartz bubbler is used to detect the desired controlled atmosphere in the process chamber and delivers a continuous flow of oxygen. Along with the diffusion furnace, a graphite susceptor and quartz wafer guide is also included. The susceptor that included with 1148G2 provides uniform heating of the wafer during the diffusion process. The quartz wafer guide ensures that the silicon wafer is held reliably at the lower end of the susceptor during the entire process. The ability to re-position the susceptor within the furnace allows for multiple, single, or special wafer diffusion. 1148 G2 is designed with safety features including a vacuum thermal insulation barrier for maintaining process efficiency while avoiding harm to the user. The oxygen flowmeter also shut off the gas flow when no oxygen is detected, preventing any hazardous explosions or fires from occurring. This thermal insulation barrier and oxygen shutoff further enables cooling of the wafer after the diffusion process is completed. MRL 1148G2 is Energy Star certified, requiring less energy to complete the diffusion process compared to other diffusion furnaces. The integrated powder cooling system also prevents any formation of unwanted oxides or chemical impurities to ensure a perfect outcome at the end of the entire diffusion process.
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